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Power Field-Effect Transistor, 17.3A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2704
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Newark | Mosfet Transistor, P Channel, -35 A, -30 V, 0.0088 Ohm, -4.5 V, -1 V Rohs Compliant: Yes |Vishay SI7625DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 16118 |
|
$0.6520 / $0.9570 | Buy Now |
DISTI #
86R3928
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Newark | Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:52W Rohs Compliant: Yes |Vishay SI7625DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4310 / $0.5090 | Buy Now |
DISTI #
69W7232
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Newark | Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1Vrohs Compliant: Yes |Vishay SI7625DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6590 | Buy Now |
DISTI #
SI7625DN-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 17.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7625DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 6000 |
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$0.4180 / $0.4601 | Buy Now |
DISTI #
SI7625DN-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 17.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7625DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.4374 / $0.5557 | Buy Now |
DISTI #
781-SI7625DN-T1-GE3
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Mouser Electronics | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 74604 |
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$0.4050 / $0.9400 | Buy Now |
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Future Electronics | P-Channel 30 V 7 mΩ 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 24000Reel |
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$0.4100 / $0.4300 | Buy Now |
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Future Electronics | P-Channel 30 V 7 mΩ 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.4100 / $0.4300 | Buy Now |
DISTI #
SI7625DN-T1-GE3
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TTI | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 33000 In Stock |
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$0.4010 / $0.4300 | Buy Now |
DISTI #
SI7625DN-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -30V, -17.3A, Idm: -80A, 33W Min Qty: 1 | 0 |
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$0.6400 / $0.9500 | RFQ |
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SI7625DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7625DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 17.3A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 17.3 A | |
Drain-source On Resistance-Max | 0.007 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI7625DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7625DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7141DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 20V, 0.0019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7625DN-T1-GE3 vs SI7141DP-T1-GE3 |