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Part Details for SI7611DN-T1-GE3 by Vishay Intertechnologies
Overview of SI7611DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (28 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SI7611DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
69W7231
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Newark | Mosfet, P Channel, -40V, -18A, Powerpak 1212-8, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1Vrohs Compliant: Yes |Vishay SI7611DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4683 |
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$1.0000 / $1.6300 | Buy Now |
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DISTI #
99AC4340
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Newark | Mosfet, P-Ch, -40V, -18A, Powerpak1212-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-18A, Drain Source Voltage Vds:-40V, On Resistance Rds(On):0.021Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Powerrohs Compliant: Yes |Vishay SI7611DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 59027 |
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$1.1000 / $1.7700 | Buy Now |
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DISTI #
16P3852
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Newark | P Channel Mosfet, -40V, 18A, Powerpak, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Power Dissipation:3.7W Rohs Compliant: Yes |Vishay SI7611DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9460 | Buy Now |
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DISTI #
SI7611DN-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 40V 9.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7611DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.7155 / $0.9090 | Buy Now |
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DISTI #
SI7611DN-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 40V 9.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7611DN-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
|
$0.7155 / $0.8851 | Buy Now |
|
DISTI #
69W7231
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Avnet Americas | Trans MOSFET P-CH 40V 9.3A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 69W7231) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 3 Days Container: Ammo Pack | 4683 Partner Stock |
|
$1.0000 / $1.6300 | Buy Now |
|
DISTI #
781-SI7611DN-T1-GE3
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Mouser Electronics | MOSFET -40V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 11571 |
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$0.6690 / $1.5700 | Buy Now |
|
DISTI #
V36:1790_09216372
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Arrow Electronics | Trans MOSFET P-CH 40V 18A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Date Code: 2342 | Americas - 33000 |
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$0.6611 / $0.7089 | Buy Now |
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DISTI #
E02:0323_00530335
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Arrow Electronics | Trans MOSFET P-CH 40V 18A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Date Code: 2350 | Europe - 21000 |
|
$0.7220 / $0.7642 | Buy Now |
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|
Future Electronics | P-Channel 40 V 0.025 Ohm 39 W Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
|
$0.6650 / $0.6900 | Buy Now |
Part Details for SI7611DN-T1-GE3
SI7611DN-T1-GE3 CAD Models
SI7611DN-T1-GE3 Part Data Attributes:
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SI7611DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7611DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 9.3A I(D), 40V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 39 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |