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Power Field-Effect Transistor, 28A I(D), 100V, 0.041ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73K2985
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Newark | P Channel Mosfet, -100V, 28A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI7489DP-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5245 |
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$0.8650 | Buy Now |
DISTI #
29X0548
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Newark | Mosfet, P Channel, -100V, -28A, Powerpak So-8, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:83W Rohs Compliant: Yes |Vishay SI7489DP-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1000 / $1.3200 | Buy Now |
DISTI #
SI7489DP-T1-E3
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Avnet Americas | Trans MOSFET P-CH 100V 7.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7489DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 15000 |
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$1.1094 / $1.2212 | Buy Now |
DISTI #
SI7489DP-T1-E3
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Avnet Americas | Trans MOSFET P-CH 100V 7.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7489DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$1.1610 / $1.4749 | Buy Now |
DISTI #
73K2985
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Avnet Americas | Trans MOSFET P-CH 100V 7.8A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 73K2985) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack | 5345 Partner Stock |
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$1.7900 / $2.6600 | Buy Now |
DISTI #
781-SI7489DP-E3
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Mouser Electronics | MOSFET -100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 10859 |
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$1.1600 / $2.5600 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.041 Ohms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 21000Reel |
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$1.1300 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.041 Ohms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.1300 | Buy Now |
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Bristol Electronics | 10581 |
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RFQ | ||
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Bristol Electronics | 3000 |
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RFQ |
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SI7489DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7489DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.041ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | POWERPAK SO-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks, 4 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 61 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 315 ns | |
Turn-on Time-Max (ton) | 55 ns |