Datasheets
SI7463DP-T1-GE3 by:

TRANSISTOR 11 A, 40 V, 0.0092 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power

Part Details for SI7463DP-T1-GE3 by Vishay Siliconix

Overview of SI7463DP-T1-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI7463DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7463DP-T1-GE3CT-ND
DigiKey MOSFET P-CH 40V 11A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 218
In Stock
  • 1 $2.8300
  • 10 $2.3510
  • 100 $1.8710
  • 500 $1.5832
  • 1,000 $1.3433
  • 3,000 $1.2761
  • 6,000 $1.2282
$1.2282 / $2.8300 Buy Now

Part Details for SI7463DP-T1-GE3

SI7463DP-T1-GE3 CAD Models

SI7463DP-T1-GE3 Part Data Attributes:

SI7463DP-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI7463DP-T1-GE3 Vishay Siliconix TRANSISTOR 11 A, 40 V, 0.0092 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0092 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 5.4 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI7463DP-T1-GE3

This table gives cross-reference parts and alternative options found for SI7463DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7463DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7463DP-T1-E3 Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SI7463DP-T1-GE3 vs SI7463DP-T1-E3
SI7463DP-T1-E3 TRANSISTOR 11 A, 40 V, 0.0092 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SI7463DP-T1-GE3 vs SI7463DP-T1-E3
Part Number Description Manufacturer Compare
SI7463DP-T1-E3 Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SI7463DP-T1-GE3 vs SI7463DP-T1-E3

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