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Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86AK6321
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Newark | Mosfet, N-Ch, 100V, 5.7A, Powerpak So Rohs Compliant: Yes |Vishay SI7456DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$1.3500 / $1.6400 | Buy Now |
DISTI #
97K9795
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Newark | Mosfet, N, So-8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Power Dissipation:1.9W Rohs Compliant: Yes |Vishay SI7456DP-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.8800 | Buy Now |
DISTI #
SI7456DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$1.0765 / $1.1438 | Buy Now |
DISTI #
V72:2272_09216359
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Arrow Electronics | Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2310 Container: Cut Strips | Americas - 1950 |
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$1.0974 / $1.3001 | Buy Now |
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Future Electronics | N-Channel 100 V 5.7 A 1.9 W Surface Mount Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
|
$1.1000 | Buy Now |
DISTI #
67017599
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Verical | Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2310 | Americas - 1950 |
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$1.0974 | Buy Now |
DISTI #
SI7456DP-T1-GE3
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TTI | MOSFETs 100V 9.3A 5.2W 25mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 21000 In Stock |
|
$1.0000 | Buy Now |
DISTI #
SI7456DP-T1-GE3
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Avnet Asia | Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R (Alt: SI7456DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
|
$1.7830 / $2.0090 | Buy Now |
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CHIPMALL.COM LIMITED | 100V 5.7A 25m��@10V,9.3A 1.9W 4V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS | 2750 |
|
$1.2619 / $1.6781 | Buy Now |
|
Component Electronics, Inc | IN STOCK SHIP TODAY | 46 |
|
$6.0000 / $9.2300 | Buy Now |
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SI7456DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7456DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | POWERPAK SO-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 5.7 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.9 W | |
Power Dissipation-Max (Abs) | 1.9 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 140 ns | |
Turn-on Time-Max (ton) | 60 ns |
This table gives cross-reference parts and alternative options found for SI7456DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7456DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SI7456DP-T1 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | SI7456DP-T1-GE3 vs SI7456DP-T1 |
SI7456DP-T1-E3 | Vishay Intertechnologies | $47.8546 | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 | SI7456DP-T1-GE3 vs SI7456DP-T1-E3 |
FDB8443-F085 | onsemi | Check for Price | N-Channel PowerTrench® MOSFET, 40V, 80A, 3.0mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified | SI7456DP-T1-GE3 vs FDB8443-F085 |
FDB8443 | onsemi | Check for Price | N-Channel PowerTrench® MOSFET 40V, 182A, 3mΩ, D2PAK-3 / TO-263-2, 800-REEL | SI7456DP-T1-GE3 vs FDB8443 |