-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SI7386DP-T1-E3CT-ND
|
DigiKey | MOSFET N-CH 30V 12A PPAK SO-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2662 In Stock |
|
$0.5873 / $1.5600 | Buy Now |
|
Component Electronics, Inc | IN STOCK SHIP TODAY | 100 |
|
$1.0000 / $1.5400 | Buy Now |
|
New Advantage Corporation | Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
|
$0.8333 / $0.8929 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI7386DP-T1-E3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI7386DP-T1-E3
Vishay Siliconix
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R
|
Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-XDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 32 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.007 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI7386DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7386DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7386DP-T1-E3 | Power Field-Effect Transistor, 12A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7386DP-T1-E3 vs SI7386DP-T1-E3 |