Part Details for SI7374DP-T1-E3 by Vishay Siliconix
Overview of SI7374DP-T1-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SI7374DP-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7374DP-T1-E3TR-ND
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DigiKey | MOSFET N-CH 30V 24A PPAK SO-8 Min Qty: 3000 Lead time: 18 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.4250 / $1.4853 | Buy Now |
Part Details for SI7374DP-T1-E3
SI7374DP-T1-E3 CAD Models
SI7374DP-T1-E3 Part Data Attributes:
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SI7374DP-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7374DP-T1-E3
Vishay Siliconix
Trans MOSFET N-CH 30V 23.8A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 23.8 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 56 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |