Datasheets
SI7223DN-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SI7223DN-T1-GE3 by Vishay Intertechnologies

Overview of SI7223DN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI7223DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 56AC6592
Newark Mosfet, Dual P-Ch, -30V, Powerpak 1212, Transistor Polarity:Dual P Channel, Continuous Drain Current Id:-6A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.022Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Rohs Compliant: Yes |Vishay SI7223DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 7389
  • 1 $0.9780
  • 10 $0.8140
  • 25 $0.7600
  • 50 $0.7050
  • 100 $0.6510
$0.6510 / $0.9780 Buy Now
DISTI # 59AC7489
Newark Dual P-Channel 20-V (D-S) Mosfet |Vishay SI7223DN-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.3680
  • 10,000 $0.3600
$0.3600 / $0.3680 Buy Now
DISTI # SI7223DN-T1-GE3
Avnet Americas DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI7223DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.3314
$0.3314 Buy Now
DISTI # 78-SI7223DN-T1-GE3
Mouser Electronics MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 23259
  • 1 $0.9000
  • 10 $0.7340
  • 100 $0.5370
  • 500 $0.4310
  • 1,000 $0.3950
  • 3,000 $0.3510
  • 6,000 $0.3370
$0.3370 / $0.9000 Buy Now
DISTI # V36:1790_21688038
Arrow Electronics Trans MOSFET P-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2425 Americas - 3000
  • 3,000 $0.3499
  • 6,000 $0.3362
$0.3362 / $0.3499 Buy Now
Future Electronics Dual, -30Volt, 6Amp, 26.4mohm, PPak-1212 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3500
  • 6,000 $0.3400
  • 9,000 $0.3350
  • 12,000 $0.3350
  • 15,000 $0.3250
$0.3250 / $0.3500 Buy Now
Future Electronics Dual, -30Volt, 6Amp, 26.4mohm, PPak-1212 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.3500
  • 6,000 $0.3400
  • 9,000 $0.3350
  • 12,000 $0.3350
  • 15,000 $0.3250
$0.3250 / $0.3500 Buy Now
DISTI # 66386129
Verical Trans MOSFET P-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 45 Package Multiple: 1 Date Code: 2242 Americas - 3603
  • 45 $0.7000
  • 50 $0.6325
  • 100 $0.5450
  • 200 $0.5250
  • 500 $0.4613
  • 1,000 $0.3775
  • 2,000 $0.3612
$0.3612 / $0.7000 Buy Now
DISTI # 85558214
Verical Trans MOSFET P-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2425 Americas - 3000
  • 3,000 $0.3499
  • 6,000 $0.3362
$0.3362 / $0.3499 Buy Now
DISTI # SI7223DN-T1-GE3
TTI MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 12000
In Stock
  • 3,000 $0.3460
  • 6,000 $0.3380
$0.3380 / $0.3460 Buy Now
DISTI # C1S803605675855
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 3613
  • 1 $0.6840
  • 10 $0.5600
  • 50 $0.5060
  • 100 $0.4360
  • 200 $0.4200
  • 500 $0.3690
  • 1,000 $0.3020
  • 2,000 $0.2890
$0.2890 / $0.6840 Buy Now
DISTI # SI7223DN-T1-GE3
EBV Elektronik DUAL P-CHANNEL 20-V (D-S) MOSFET (Alt: SI7223DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 6A 26.4m8A10V 2.5V250uA 2 P-Channel MOSFETs ROHS 4
  • 1 $0.5498
  • 10 $0.5357
  • 30 $0.5263
  • 100 $0.5169
$0.5169 / $0.5498 Buy Now

Part Details for SI7223DN-T1-GE3

SI7223DN-T1-GE3 CAD Models

SI7223DN-T1-GE3 Part Data Attributes

SI7223DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7223DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 9.8 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.0264 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 152 pF
JESD-30 Code S-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 23 W
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 96 ns

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