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Transistors / Power Field-Effect Transistors / SI7212DN-T1-E3
Datasheets
SI7212DN-T1-E3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Vishay Spectrol
Not Found

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7212DN-T1-E3 by Vishay Intertechnologies

Results Overview of SI7212DN-T1-E3 by Vishay Intertechnologies

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SI7212DN-T1-E3 Information

SI7212DN-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SI7212DN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7212DN-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-Channel 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212... DN-T1-E3) more RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.0750
  • 6,000 $1.0578
  • 12,000 $1.0412
  • 18,000 $1.0238
  • 24,000 $1.0118
$1.0118 / $1.0750 Buy Now
DISTI # 781-SI7212DN-T1-E3
Mouser Electronics MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant 13191
  • 1 $1.9300
  • 10 $1.5400
  • 100 $1.2200
  • 250 $1.1300
  • 500 $1.0800
  • 3,000 $1.0700
$1.0700 / $1.9300 Buy Now
Future Electronics Si7212DN Series 30 V 4.9 A 36 mOhm Dual N-Channel MOSFET - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel 0
Reel
  • 3,000 $0.4250
  • 6,000 $0.4200
  • 9,000 $0.4150
$0.4150 / $0.4250 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 4.9A I(D), 30V, 0.036OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE ... SEMICONDUCTOR FET more 47
  • 1 $1.7250
  • 4 $1.5870
  • 17 $1.3800
$1.3800 / $1.7250 Buy Now
DISTI # SI7212DN-T1-E3
TTI MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.7160
  • 6,000 $0.7020
$0.7020 / $0.7160 Buy Now
DISTI # SI7212DN-T1-E3
EBV Elektronik Transistor MOSFET Array Dual NChannel 30V 49A 8Pin PowerPAK 1212 TR (Alt: SI7212DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7212DN-T1-E3

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SI7212DN-T1-E3 Part Data Attributes

Parametric Data
SI7212DN-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7212DN-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7212DN-T1-E3 Related Parts

SI7212DN-T1-E3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI7212DN-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. This helps to reduce thermal resistance and ensures efficient heat dissipation.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate airflow, using a heat sink, and ensuring the device is properly mounted and soldered. Additionally, consider derating the device's power handling capabilities according to the ambient temperature.

  • The recommended soldering conditions for the SI7212DN-T1-E3 are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It's also essential to follow the recommended soldering profile and use a solder with a melting point above 217°C.

  • To protect the SI7212DN-T1-E3 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded. Additionally, consider using ESD-protection devices or circuits in the system design.

  • The SI7212DN-T1-E3 has a TID radiation tolerance of 100 krad(Si). This means the device can withstand a total ionizing dose of 100 krad(Si) without significant degradation. However, it's essential to consider the specific radiation environment and potential single-event effects (SEEs) when designing systems for high-reliability applications.