We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / Power Field-Effect Transistors / SI7212DN-T1-E3
Datasheets
SI7212DN-T1-E3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Vishay Spectrol
Not Found

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7212DN-T1-E3 by Vishay Intertechnologies

Results Overview of SI7212DN-T1-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

SI7212DN-T1-E3 Information

SI7212DN-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7212DN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7212DN-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-Channel 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212... DN-T1-E3) more RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.0750
  • 6,000 $1.0578
  • 12,000 $1.0412
  • 18,000 $1.0238
  • 24,000 $1.0118
$1.0118 / $1.0750 Buy Now
DISTI # 781-SI7212DN-T1-E3
Mouser Electronics MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant 13191
  • 1 $1.9300
  • 10 $1.5400
  • 100 $1.2200
  • 250 $1.1300
  • 500 $1.0800
  • 3,000 $1.0700
$1.0700 / $1.9300 Buy Now
Future Electronics Si7212DN Series 30 V 4.9 A 36 mOhm Dual N-Channel MOSFET - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel 0
Reel
  • 3,000 $0.4250
  • 6,000 $0.4200
  • 9,000 $0.4150
$0.4150 / $0.4250 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 4.9A I(D), 30V, 0.036OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE ... SEMICONDUCTOR FET more 47
  • 1 $1.7250
  • 4 $1.5870
  • 17 $1.3800
$1.3800 / $1.7250 Buy Now
DISTI # SI7212DN-T1-E3
TTI MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.7160
  • 6,000 $0.7020
$0.7020 / $0.7160 Buy Now
DISTI # SI7212DN-T1-E3
EBV Elektronik Transistor MOSFET Array Dual NChannel 30V 49A 8Pin PowerPAK 1212 TR (Alt: SI7212DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7212DN-T1-E3

SI7212DN-T1-E3 CAD Models

  • Part Symbol

    Part Symbol

  • Footprint

    footprint

  • 3D Model

    3D Model

Available Download Formats

Sign in to download CAD models Register or Sign In

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

SI7212DN-T1-E3 Part Data Attributes

Parametric Data
SI7212DN-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7212DN-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7212DN-T1-E3 Related Parts

SI7212DN-T1-E3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI7212DN-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. This helps to reduce thermal resistance and ensures efficient heat dissipation.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate airflow, using a heat sink, and ensuring the device is properly mounted and soldered. Additionally, consider derating the device's power handling capabilities according to the ambient temperature.

  • The recommended soldering conditions for the SI7212DN-T1-E3 are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It's also essential to follow the recommended soldering profile and use a solder with a melting point above 217°C.

  • To protect the SI7212DN-T1-E3 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded. Additionally, consider using ESD-protection devices or circuits in the system design.

  • The SI7212DN-T1-E3 has a TID radiation tolerance of 100 krad(Si). This means the device can withstand a total ionizing dose of 100 krad(Si) without significant degradation. However, it's essential to consider the specific radiation environment and potential single-event effects (SEEs) when designing systems for high-reliability applications.