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Transistors / Power Field-Effect Transistors / SI7212DN-T1-E3
Datasheets
SI7212DN-T1-E3 by:

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7212DN-T1-E3 by Vishay Intertechnologies

Overview of SI7212DN-T1-E3 by Vishay Intertechnologies

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Price & Stock for SI7212DN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7212DN-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-Channel 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 781-SI7212DN-T1-E3
Mouser Electronics MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant 14105
  • 1 $1.8400
  • 10 $1.5400
  • 100 $1.2200
  • 250 $1.1300
  • 500 $1.0800
  • 3,000 $0.8820
  • 6,000 $0.8810
  • 9,000 $0.8790
$0.8790 / $1.8400 Buy Now
Future Electronics Si7212DN Series 30 V 4.9 A 36 mOhm Dual N-Channel MOSFET - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks Container: Reel 6000
Reel
  • 3,000 $0.8950
  • 6,000 $0.8650
$0.8650 / $0.8950 Buy Now
Future Electronics Si7212DN Series 30 V 4.9 A 36 mOhm Dual N-Channel MOSFET - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.8950
  • 6,000 $0.8650
$0.8650 / $0.8950 Buy Now
DISTI # 82772263
Verical Trans MOSFET N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2407 Americas - 3000
  • 3,000 $1.1074
$1.1074 Buy Now
DISTI # 82779096
Verical Trans MOSFET N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2407 Americas - 3000
  • 3,000 $1.1074
$1.1074 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 4.9A I(D), 30V, 0.036OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 47
  • 1 $1.7250
  • 4 $1.5870
  • 17 $1.3800
$1.3800 / $1.7250 Buy Now
DISTI # SI7212DN-T1-E3
TTI MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.7380
  • 6,000 $0.7240
$0.7240 / $0.7380 Buy Now
DISTI # SI7212DN-T1-E3
IBS Electronics Si7212DN Series 30 V 4.9 A 36 mOhm Dual N-Channel MOSFET - PowerPAK 1212-8 Min Qty: 356 Package Multiple: 1 34002
  • 356 $1.2196
$1.2196 Buy Now
DISTI # SI7212DN-T1-E3
EBV Elektronik Transistor MOSFET Array Dual N-Channel 30V 4.9A 8-Pin PowerPAK 1212 T/R (Alt: SI7212DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7212DN-T1-E3

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SI7212DN-T1-E3 Part Data Attributes

Parametric Data
SI7212DN-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7212DN-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 4.9A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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