Part Details for SI7170DP-T1-GE3 by Vishay Intertechnologies
Overview of SI7170DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI7170DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2924 |
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RFQ | ||
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Quest Components | 2339 |
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$1.8000 / $3.6000 | Buy Now |
Part Details for SI7170DP-T1-GE3
SI7170DP-T1-GE3 CAD Models
SI7170DP-T1-GE3 Part Data Attributes
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SI7170DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7170DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28.5A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 28.5 A | |
Drain-source On Resistance-Max | 0.0034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
Alternate Parts for SI7170DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7170DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7170DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7788DP-T1-GE3 | Power Field-Effect Transistor, 29.5A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7170DP-T1-GE3 vs SI7788DP-T1-GE3 |
SI5458DU-T1-GE3 | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8 | Vishay Intertechnologies | SI7170DP-T1-GE3 vs SI5458DU-T1-GE3 |
SI7856ADP-T1-E3 | TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SI7170DP-T1-GE3 vs SI7856ADP-T1-E3 |
SI7856ADP-T1-E3 | Power Field-Effect Transistor, 15A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI7170DP-T1-GE3 vs SI7856ADP-T1-E3 |