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Power Field-Effect Transistor, 22.4A I(D), 30V, 0.0055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2692
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Newark | Mosfet Transistor, P Channel, -40 A, -30 V, 0.0074 Ohm, -4.5 V, -1.2 V Rohs Compliant: Yes |Vishay SI7139DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 28930 |
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$0.9670 / $1.6600 | Buy Now |
DISTI #
86R3921
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Newark | Mosfet, P Channel, -30V, -40A, Powerpak So-8, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:48W Rohs Compliant: Yes |Vishay SI7139DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5800 / $0.6830 | Buy Now |
DISTI #
69W7221
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Newark | Mosfet, P Channel, -30V, -40A, Powerpak So-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.2Vrohs Compliant: Yes |Vishay SI7139DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.9740 | Buy Now |
DISTI #
SI7139DP-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7139DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 9000 |
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$0.5753 / $0.6333 | Buy Now |
DISTI #
SI7139DP-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7139DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.6021 / $0.7649 | Buy Now |
DISTI #
781-SI7139DP-T1-GE3
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Mouser Electronics | MOSFET -30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 13012 |
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$0.5700 / $1.4900 | Buy Now |
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Future Electronics | Single P-Channel 30 V 0.0055 Ohm 46 W Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 36000Reel |
|
$0.5750 / $0.5950 | Buy Now |
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Future Electronics | Single P-Channel 30 V 0.0055 Ohm 46 W Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5750 / $0.5950 | Buy Now |
DISTI #
77297927
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Verical | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2402 | Americas - 6000 |
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$0.9829 | Buy Now |
DISTI #
80327038
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Verical | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2411 | Americas - 3000 |
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$0.6308 | Buy Now |
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SI7139DP-T1-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SI7139DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 22.4A I(D), 30V, 0.0055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 22.4 A | |
Drain-source On Resistance-Max | 0.0055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |