Datasheets
SI7137DP-T1-GE3 by:

Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Part Details for SI7137DP-T1-GE3 by Vishay Intertechnologies

Overview of SI7137DP-T1-GE3 by Vishay Intertechnologies

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for SI7137DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 38AH2380
Newark P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI7137DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 9000
  • 1 $1.3500
$1.3500 Buy Now
DISTI # 97W2691
Newark Mosfet Transistor, P Channel, -60 A, -20 V, 0.0016 Ohm, -10 V, -1.4 V Rohs Compliant: Yes |Vishay SI7137DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 32413
  • 1 $2.2000
  • 10 $1.9100
  • 25 $1.8100
  • 50 $1.7000
  • 100 $1.5900
  • 500 $1.3200
$1.3200 / $2.2000 Buy Now
DISTI # 63R6005
Newark Mosfet Transistor, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.4V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SI7137DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.4000
$1.4000 Buy Now
DISTI # SI7137DP-T1-GE3
Avnet Americas Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 9000
  • 3,000 $1.2734
  • 6,000 $1.2326
  • 12,000 $1.1917
  • 18,000 $1.1435
  • 24,000 $1.1063
  • 30,000 $1.0543
  • 300,000 $1.0024
$1.0024 / $1.2734 Buy Now
DISTI # 781-SI7137DP-GE3
Mouser Electronics MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant 21860
  • 1 $2.2100
  • 10 $1.7900
  • 100 $1.4700
  • 250 $1.3500
  • 500 $1.2300
  • 1,000 $1.0500
  • 3,000 $0.9970
  • 6,000 $0.9590
$0.9590 / $2.2100 Buy Now
Future Electronics Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.9750
$0.9750 Buy Now
Future Electronics Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.9750
$0.9750 Buy Now
Quest Components 42 A, 20 V, 0.00195 ohm, P-CHANNEL, Si, POWER, MOSFET 40
  • 1 $3.0000
  • 12 $1.8750
  • 41 $1.6500
$1.6500 / $3.0000 Buy Now
DISTI # SI7137DP-T1-GE3
TTI MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 15000
In Stock
  • 3,000 $0.9900
  • 6,000 $0.9500
  • 9,000 $0.9300
$0.9300 / $0.9900 Buy Now
DISTI # SI7137DP-T1-GE3
EBV Elektronik Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R (Alt: SI7137DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 20V 60A 1.95m25A10V 1.4V250uA 1PCSPChannel SOP-8 MOSFETs ROHS 5800
  • 1 $0.5524
  • 10 $0.4538
  • 30 $0.4046
  • 100 $0.3553
  • 500 $0.3255
  • 1,000 $0.3105
$0.3105 / $0.5524 Buy Now

Part Details for SI7137DP-T1-GE3

SI7137DP-T1-GE3 CAD Models

SI7137DP-T1-GE3 Part Data Attributes:

SI7137DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7137DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.00195 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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