-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38AH2380
|
Newark | P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI7137DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 9000 |
|
$1.3500 | Buy Now |
DISTI #
97W2691
|
Newark | Mosfet Transistor, P Channel, -60 A, -20 V, 0.0016 Ohm, -10 V, -1.4 V Rohs Compliant: Yes |Vishay SI7137DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 32413 |
|
$1.3200 / $2.2000 | Buy Now |
DISTI #
63R6005
|
Newark | Mosfet Transistor, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.4V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SI7137DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.4000 | Buy Now |
DISTI #
SI7137DP-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 9000 |
|
$1.0024 / $1.2734 | Buy Now |
DISTI #
781-SI7137DP-GE3
|
Mouser Electronics | MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant | 21860 |
|
$0.9590 / $2.2100 | Buy Now |
|
Future Electronics | Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
|
$0.9750 | Buy Now |
|
Future Electronics | Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.9750 | Buy Now |
|
Quest Components | 42 A, 20 V, 0.00195 ohm, P-CHANNEL, Si, POWER, MOSFET | 40 |
|
$1.6500 / $3.0000 | Buy Now |
DISTI #
SI7137DP-T1-GE3
|
TTI | MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 15000 In Stock |
|
$0.9300 / $0.9900 | Buy Now |
DISTI #
SI7137DP-T1-GE3
|
EBV Elektronik | Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R (Alt: SI7137DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI7137DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI7137DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.00195 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |