Datasheets
SI7116DN-T1-E3 by:

Trans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R

Part Details for SI7116DN-T1-E3 by Vishay Siliconix

Overview of SI7116DN-T1-E3 by Vishay Siliconix

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Price & Stock for SI7116DN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7116DN-T1-E3CT-ND
DigiKey MOSFET N-CH 40V 10.5A PPAK1212-8 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8599
In Stock
  • 1 $2.1500
  • 10 $1.7820
  • 100 $1.4180
  • 500 $1.1999
  • 1,000 $1.0181
  • 3,000 $0.9672
  • 6,000 $0.9308
  • 9,000 $0.9000
$0.9000 / $2.1500 Buy Now
DISTI # 70026265
RS MOSFET, N-Channel 40-V (D-S) Fast Switching | Siliconix / Vishay SI7116DN-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $2.1500
  • 30,000 $2.0400
  • 150,000 $1.9400
  • 300,000 $1.8300
$1.8300 / $2.1500 RFQ
ES Components SIL SI7116DN-T1-E3 30V MOSFET 3K/RL 0 in Stock
RFQ
New Advantage Corporation Single N-Channel 40 V 0.0078 O Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 39000
  • 3,000 $0.6429
  • 39,000 $0.6000
$0.6000 / $0.6429 Buy Now

Part Details for SI7116DN-T1-E3

SI7116DN-T1-E3 CAD Models

SI7116DN-T1-E3 Part Data Attributes

SI7116DN-T1-E3 Vishay Siliconix
Buy Now Datasheet
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SI7116DN-T1-E3 Vishay Siliconix Trans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Package Description SMALL OUTLINE, S-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 10.5 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.8 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Pure Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

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