Datasheets
SI7108DN-T1-E3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Part Details for SI7108DN-T1-E3 by Vishay Intertechnologies

Results Overview of SI7108DN-T1-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI7108DN-T1-E3 Information

SI7108DN-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7108DN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 85W3218
Newark N Channel Mosfet, 20V, 22A Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:2... 0V, Continuous Drain Current Id:22A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SI7108DN-T1-E3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.9950
  • 4,000 $0.8970
  • 6,000 $0.8650
  • 10,000 $0.8320
$0.8320 / $0.9950 Buy Now
DISTI # 51K6979
Newark N Channel Mosfet, 20V, 22A Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:20V, Contin... uous Drain Current Id:22A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SI7108DN-T1-E3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $1.3000
$1.3000 Buy Now
DISTI # SI7108DN-T1-E3
Avnet Americas Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7108DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2881
  • 6,000 $0.2835
  • 12,000 $0.2789
  • 18,000 $0.2743
  • 24,000 $0.2711
$0.2711 / $0.2881 Buy Now
DISTI # 781-SI7108DN-T1-E3
Mouser Electronics MOSFETs 20V 22A 0.0049Ohm RoHS: Compliant 3353
  • 1 $2.2500
  • 10 $1.6200
  • 100 $1.2300
  • 500 $0.9840
  • 1,000 $0.8540
  • 3,000 $0.8120
$0.8120 / $2.2500 Buy Now
DISTI # V72:2272_09215607
Arrow Electronics Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 1113 Container: Cut Strips Americas - 1
  • 1 $0.1708
$0.1708 Buy Now
Future Electronics Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.8250
$0.8250 Buy Now
Future Electronics Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel 0
Reel
  • 3,000 $0.8250
$0.8250 Buy Now
DISTI # 75703443
Verical Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2246 Americas - 3000
  • 3,000 $1.4103
$1.4103 Buy Now
Bristol Electronics   4985
RFQ
Bristol Electronics   1424
RFQ
Quest Components 14 A, 20 V, 0.0049 OHM, N-CHANNEL, SI, POWER, MOSFET 1139
  • 1 $1.0500
  • 96 $0.5250
  • 382 $0.4200
$0.4200 / $1.0500 Buy Now
Quest Components 14 A, 20 V, 0.0049 OHM, N-CHANNEL, SI, POWER, MOSFET 118
  • 1 $1.0500
  • 25 $0.6300
  • 96 $0.5250
$0.5250 / $1.0500 Buy Now
DISTI # SI7108DN-T1-E3
TTI MOSFETs 20V 22A 0.0049Ohm pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 12000
In Stock
  • 3,000 $0.8000
$0.8000 Buy Now
DISTI # SI7108DN-T1-E3
EBV Elektronik Trans MOSFET NCH 20V 14A 8Pin PowerPAK 1212 TR (Alt: SI7108DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7108DN-T1-E3

SI7108DN-T1-E3 CAD Models

SI7108DN-T1-E3 Part Data Attributes

SI7108DN-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7108DN-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 24 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.0049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.8 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7108DN-T1-E3

This table gives cross-reference parts and alternative options found for SI7108DN-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7108DN-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7108DN-T1-GE3 Vishay Intertechnologies $1.3509 Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SI7108DN-T1-E3 vs SI7108DN-T1-GE3

SI7108DN-T1-E3 Related Parts

SI7108DN-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7108DN-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.

  • The maximum allowed voltage on the input pins of the SI7108DN-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.

  • The SI7108DN-T1-E3 is designed for low-frequency applications up to 100 kHz. For high-frequency applications, consider using a different device or consulting with a Vishay Intertechnologies application engineer.

  • Handle the SI7108DN-T1-E3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage to the device.