-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI7108DN-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
85W3218
|
Newark | N Channel Mosfet, 20V, 22A Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:2... more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.8320 / $0.9950 | Buy Now |
DISTI #
51K6979
|
Newark | N Channel Mosfet, 20V, 22A Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:20V, Contin... more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.3000 | Buy Now |
DISTI #
SI7108DN-T1-E3
|
Avnet Americas | Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7108DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.2711 / $0.2881 | Buy Now |
DISTI #
781-SI7108DN-T1-E3
|
Mouser Electronics | MOSFETs 20V 22A 0.0049Ohm RoHS: Compliant | 3353 |
|
$0.8120 / $2.2500 | Buy Now |
DISTI #
V72:2272_09215607
|
Arrow Electronics | Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 1113 Container: Cut Strips | Americas - 1 |
|
$0.1708 | Buy Now |
|
Future Electronics | Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel |
3000 Reel |
|
$0.8250 | Buy Now |
|
Future Electronics | Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel |
0 Reel |
|
$0.8250 | Buy Now |
DISTI #
75703443
|
Verical | Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2246 | Americas - 3000 |
|
$1.4103 | Buy Now |
|
Bristol Electronics | 4985 |
|
RFQ | ||
|
Bristol Electronics | 1424 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI7108DN-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI7108DN-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.0049 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.8 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI7108DN-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7108DN-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SI7108DN-T1-GE3 | Vishay Intertechnologies | $1.3509 | Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SI7108DN-T1-E3 vs SI7108DN-T1-GE3 |