Part Details for SI7106DN-T1-GE3 by Vishay Siliconix
Overview of SI7106DN-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for SI7106DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7106DN-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 20V 12.5A PPAK1212-8 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3000 In Stock |
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$0.5643 / $2.1100 | Buy Now |
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Bristol Electronics | 8 |
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RFQ | ||
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$1.0700 | Buy Now |
Part Details for SI7106DN-T1-GE3
SI7106DN-T1-GE3 CAD Models
SI7106DN-T1-GE3 Part Data Attributes
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SI7106DN-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7106DN-T1-GE3
Vishay Siliconix
TRANS MOSFET N-CH 20V 12.5A 8PIN PWRPAK 1212 - Tape and Reel
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | SMALL OUTLINE, S-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 12.5 A | |
| Drain-source On Resistance-Max | 0.0062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.8 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7106DN-T1-GE3
This table gives cross-reference parts and alternative options found for SI7106DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7106DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7106DN-T1-E3 | Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R | Vishay Siliconix | SI7106DN-T1-GE3 vs SI7106DN-T1-E3 |