Datasheets
SI6953DQ by:

Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

Part Details for SI6953DQ by Fairchild Semiconductor Corporation

Overview of SI6953DQ by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI6953DQ

Part # Distributor Description Stock Price Buy
Quest Components 1.9 A, 20 V, 0.17 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 2397
  • 1 $0.6309
  • 144 $0.2944
  • 680 $0.2629
$0.2629 / $0.6309 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 1.9A, 20V, 2-Element, P-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 1500
  • 1 $0.3299
  • 25 $0.3233
  • 100 $0.3101
  • 500 $0.2969
  • 1,000 $0.2804
$0.2804 / $0.3299 Buy Now
Chip1Cloud Dual 20V P-Channel PowerTrench MOSFET 85600
RFQ

Part Details for SI6953DQ

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SI6953DQ Part Data Attributes

SI6953DQ Fairchild Semiconductor Corporation
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SI6953DQ Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TSSOP
Package Description TSSOP-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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