Datasheets
SI6361DQ by: Temic Semiconductors

Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for SI6361DQ by Temic Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SI6361DQ

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SI6361DQ Part Data Attributes

SI6361DQ Temic Semiconductors
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SI6361DQ Temic Semiconductors Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
Part Life Cycle Code Obsolete
Ihs Manufacturer TEMIC SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration 3 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.6 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G28
Number of Elements 6
Number of Terminals 28
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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