Part Details for SI5908DC-T1-E3 by Vishay Siliconix
Overview of SI5908DC-T1-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI5908DC-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI5908DC-T1-E3CT-ND
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DigiKey | MOSFET 2N-CH 20V 4.4A 1206-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8348 In Stock |
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$0.5010 / $1.3300 | Buy Now |
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New Advantage Corporation | Dual N-Channel 20 V 0.052 Ohm 7.5 nC 1.1 W Silicon Surface Mount Mosfet - SMD-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 18000 |
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$0.9533 / $1.0200 | Buy Now |
Part Details for SI5908DC-T1-E3
SI5908DC-T1-E3 CAD Models
SI5908DC-T1-E3 Part Data Attributes:
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SI5908DC-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI5908DC-T1-E3
Vishay Siliconix
Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-XDSO-C8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.4 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |