Part Details for SI5461EDC-T1-E3 by Vishay Siliconix
Overview of SI5461EDC-T1-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI5461EDC-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70026244
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RS | MOSFET, P-CH, 20V(D-S) 45MOHM CHIPFET | Siliconix / Vishay SI5461EDC-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$1.2400 / $1.4600 | RFQ |
Part Details for SI5461EDC-T1-E3
SI5461EDC-T1-E3 CAD Models
SI5461EDC-T1-E3 Part Data Attributes
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SI5461EDC-T1-E3
Vishay Siliconix
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Datasheet
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Compare Parts:
SI5461EDC-T1-E3
Vishay Siliconix
TRANSISTOR 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET-8, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-XDSO-C8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for SI5461EDC-T1-E3
This table gives cross-reference parts and alternative options found for SI5461EDC-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI5461EDC-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI5441BDC-T1-E3 | TRANSISTOR 4400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 1206-8, CHIPFET-8, FET General Purpose Small Signal | Vishay Siliconix | SI5461EDC-T1-E3 vs SI5441BDC-T1-E3 |
SI5441DC-T1 | Transistor, | Vishay Siliconix | SI5461EDC-T1-E3 vs SI5441DC-T1 |
SI5433BDC-T1-E3 | TRANSISTOR 4800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 1206-8, CHIPFET-8, FET General Purpose Small Signal | Vishay Siliconix | SI5461EDC-T1-E3 vs SI5433BDC-T1-E3 |
SI5441BDC-T1-GE3 | TRANSISTOR 4400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal | Vishay Siliconix | SI5461EDC-T1-E3 vs SI5441BDC-T1-GE3 |
NTHS5443T1G | 3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8 | Rochester Electronics LLC | SI5461EDC-T1-E3 vs NTHS5443T1G |
SI5433DC-T1-E3 | Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8 | Vishay Siliconix | SI5461EDC-T1-E3 vs SI5433DC-T1-E3 |
SI5441DC-T1-E3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5461EDC-T1-E3 vs SI5441DC-T1-E3 |
SI5457DC-T1-GE3 | Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8 | Vishay Siliconix | SI5461EDC-T1-E3 vs SI5457DC-T1-GE3 |
SI5441BDC-T1-GE3 | Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5461EDC-T1-E3 vs SI5441BDC-T1-GE3 |
NTHS5443T1 | 3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 1206A-03, CHIPFET-8 | onsemi | SI5461EDC-T1-E3 vs NTHS5443T1 |