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Power Field-Effect Transistor, 11.6A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, CHIPFET-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI5418DU-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 12A PPAK Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1052 In Stock |
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$0 / $1.3000 | Buy Now |
DISTI #
70616982
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RS | SI5418DU-T1-GE3 N-channel MOSFET Transistor,11.6 A,30V,8-Pin PowerPAK ChipFET | Siliconix / Vishay SI5418DU-T1-GE3 RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.5100 / $0.6000 | RFQ |
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SI5418DU-T1-GE3
Vishay Siliconix
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Datasheet
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SI5418DU-T1-GE3
Vishay Siliconix
Power Field-Effect Transistor, 11.6A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, CHIPFET-8
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | ROHS COMPLIANT, POWERPAK, CHIPFET-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11.6 A | |
Drain-source On Resistance-Max | 0.0145 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |