Part Details for SI4963DY-T1 by Vishay Siliconix
Results Overview of SI4963DY-T1 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI4963DY-T1 Information
SI4963DY-T1 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
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| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SI4963DY-T1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 2168 |
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$0.5940 / $1.8000 | Buy Now |
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Quest Components | 1734 |
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$0.6600 / $2.4000 | Buy Now |
Part Details for SI4963DY-T1
SI4963DY-T1 CAD Models
SI4963DY-T1 Part Data Attributes
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SI4963DY-T1
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4963DY-T1
Vishay Siliconix
Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4963DY-T1
This table gives cross-reference parts and alternative options found for SI4963DY-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4963DY-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS6890AL86Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | SI4963DY-T1 vs FDS6890AL86Z |
| FDS6890A | Rochester Electronics LLC | Check for Price | 7.5A, 20V, 0.034ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 | SI4963DY-T1 vs FDS6890A |
| SI4966DY-T1-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 | SI4963DY-T1 vs SI4966DY-T1-E3 |
| MMDF4207R2 | Motorola Mobility LLC | Check for Price | 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 | SI4963DY-T1 vs MMDF4207R2 |
| FDS9933BZ | Rochester Electronics LLC | Check for Price | 4.9A, 20V, 0.046ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 | SI4963DY-T1 vs FDS9933BZ |
| FDS6875_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | SI4963DY-T1 vs FDS6875_NL |
| SI4963DY | Vishay Siliconix | Check for Price | Transistor, | SI4963DY-T1 vs SI4963DY |
| SI4966DY-T1-E3 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | SI4963DY-T1 vs SI4966DY-T1-E3 |
| FDS6875 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | SI4963DY-T1 vs FDS6875 |
| FDS6875 | Rochester Electronics LLC | Check for Price | 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 | SI4963DY-T1 vs FDS6875 |