Datasheets
SI4953DY-T1 by:

Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SI4953DY-T1 by Vishay Siliconix

Overview of SI4953DY-T1 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Price & Stock for SI4953DY-T1

Part # Distributor Description Stock Price Buy
Quest Components   1680
  • 1 $3.3900
  • 479 $1.8645
  • 1,074 $1.6950
$1.6950 / $3.3900 Buy Now
Velocity Electronics Our Stock 41
RFQ

Part Details for SI4953DY-T1

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SI4953DY-T1 Part Data Attributes

SI4953DY-T1 Vishay Siliconix
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SI4953DY-T1 Vishay Siliconix Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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