Datasheets
SI4914BDY-T1-E3 by:

Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

Part Details for SI4914BDY-T1-E3 by Vishay Siliconix

Overview of SI4914BDY-T1-E3 by Vishay Siliconix

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for SI4914BDY-T1-E3

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SI4914BDY-T1-E3 Part Data Attributes

SI4914BDY-T1-E3 Vishay Siliconix
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SI4914BDY-T1-E3 Vishay Siliconix Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOIC
Package Description ROHS COMPLIANT, SOP-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.4 A
Drain-source On Resistance-Max 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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