Datasheets
SI4900DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Part Details for SI4900DY-T1-GE3 by Vishay Siliconix

Overview of SI4900DY-T1-GE3 by Vishay Siliconix

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Applications Consumer Electronics Education and Research Automotive

Price & Stock for SI4900DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI4900DY-T1-GE3CT-ND
DigiKey MOSFET 2N-CH 60V 5.3A 8SOIC Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2257
In Stock
  • 1 $1.2000
  • 10 $0.9820
  • 100 $0.7636
  • 500 $0.6472
  • 1,000 $0.5272
  • 2,500 $0.4963
  • 5,000 $0.4727
  • 12,500 $0.4509
$0.4509 / $1.2000 Buy Now

Part Details for SI4900DY-T1-GE3

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SI4900DY-T1-GE3 Part Data Attributes:

SI4900DY-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI4900DY-T1-GE3 Vishay Siliconix Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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