Datasheets
SI4896DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 6.7A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Part Details for SI4896DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4896DY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI4896DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 79AH6545
Newark Si4896Dy-T1-E3Nch Rohs Compliant: No |Vishay SI4896DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 2500
  • 1 $1.5600
$1.5600 Buy Now
DISTI # 81Y9750
Newark Mosfet, N-Ch, 80V, 6.7A, Nsoic-8, Transistor Polarity:N Channel, Continuous Drain Current Id:6.7A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0135Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Vishay SI4896DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 16630
  • 1 $2.2400
  • 10 $1.8600
  • 25 $1.7400
  • 50 $1.6100
  • 100 $1.4900
  • 250 $1.3900
$1.3900 / $2.2400 Buy Now
DISTI # 70AC6507
Newark Mosfet, N-Ch, 80V, 6.7A, 150Deg C, 1.56W, Transistor Polarity:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:6.7A, On Resistance Rds(On):0.0135Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes |Vishay SI4896DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 100 $1.2300
$1.2300 Buy Now
DISTI # 15R5112
Newark Mosfet Transistor, N Channel, 6.7 A, 80 V, 0.0135 Ohm, 10 V, 2 V |Vishay SI4896DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.4000
  • 4,000 $1.2600
  • 6,000 $1.2100
  • 10,000 $1.1700
$1.1700 / $1.4000 Buy Now
DISTI # SI4896DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4896DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 2500
  • 2,500 $1.3013
  • 5,000 $1.2596
  • 10,000 $1.2179
  • 15,000 $1.1761
  • 20,000 $1.1306
  • 25,000 $1.0775
  • 250,000 $1.0244
$1.0244 / $1.3013 Buy Now
DISTI # 781-SI4896DY-GE3
Mouser Electronics MOSFET 80V Vds 20V Vgs SO-8 RoHS: Compliant 3402
  • 1 $2.1500
  • 10 $1.7900
  • 100 $1.4300
  • 250 $1.3200
  • 500 $1.2000
  • 1,000 $1.0800
$1.0800 / $2.1500 Buy Now
Future Electronics Si4896DY Series 80 V 6.7 A 16.5 mOhm Surface Mount N-Channel MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8300
  • 5,000 $0.8000
$0.8000 / $0.8300 Buy Now
Future Electronics Si4896DY Series 80 V 6.7 A 16.5 mOhm Surface Mount N-Channel MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8300
  • 5,000 $0.8000
$0.8000 / $0.8300 Buy Now
DISTI # SI4896DY-T1-GE3
TTI MOSFET 80V Vds 20V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 30000
In Stock
  • 2,500 $0.8800
$0.8800 Buy Now
DISTI # SI4896DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R (Alt: SI4896DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Small Signal Field-Effect Transistor, 6.7A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Min Qty: 1 Package Multiple: 1 1967
  • 100 $4.0000
$4.0000 Buy Now

Part Details for SI4896DY-T1-GE3

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SI4896DY-T1-GE3 Part Data Attributes:

SI4896DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4896DY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 6.7A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 6.7 A
Drain-source On Resistance-Max 0.0165 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI4896DY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4896DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4896DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4896DY-T1-E3 TRANSISTOR 6700 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4896DY-T1-GE3 vs SI4896DY-T1-E3
SI4896DY-T1 Small Signal Field-Effect Transistor, 6.7A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4896DY-T1-GE3 vs SI4896DY-T1
Part Number Description Manufacturer Compare
SI4896DY-T1-E3 TRANSISTOR 6700 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4896DY-T1-GE3 vs SI4896DY-T1-E3
SI4896DY-T1 Small Signal Field-Effect Transistor, 6.7A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4896DY-T1-GE3 vs SI4896DY-T1

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