Datasheets
SI4890DY-T1-E3 by:

TRANSISTOR 11 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power

Part Details for SI4890DY-T1-E3 by Vishay Siliconix

Overview of SI4890DY-T1-E3 by Vishay Siliconix

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Price & Stock for SI4890DY-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI4890DY-T1-E3CT-ND
DigiKey MOSFET N-CH 30V 11A 8-SOIC Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2500
In Stock
  • 1 $2.8300
  • 10 $2.3510
  • 100 $1.8710
  • 500 $1.5832
  • 1,000 $1.3433
  • 2,500 $1.1875
$1.1875 / $2.8300 Buy Now

Part Details for SI4890DY-T1-E3

SI4890DY-T1-E3 CAD Models

SI4890DY-T1-E3 Part Data Attributes:

SI4890DY-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI4890DY-T1-E3 Vishay Siliconix TRANSISTOR 11 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4890DY-T1-E3

This table gives cross-reference parts and alternative options found for SI4890DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4890DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4890DY-T1-E3 Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4890DY-T1-E3 vs SI4890DY-T1-E3
Part Number Description Manufacturer Compare
IRF7471PBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier SI4890DY-T1-E3 vs IRF7471PBF
BSO304SN Power Field-Effect Transistor, 6.4A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG SI4890DY-T1-E3 vs BSO304SN
PHN1013 TRANSISTOR 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors SI4890DY-T1-E3 vs PHN1013
FSS232 Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd SI4890DY-T1-E3 vs FSS232
IRF7842 Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier SI4890DY-T1-E3 vs IRF7842
PHN1011 TRANSISTOR 11 A, 25 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLATIC, SO-8, FET General Purpose Power NXP Semiconductors SI4890DY-T1-E3 vs PHN1011
STS10NF30L 10A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics SI4890DY-T1-E3 vs STS10NF30L
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier SI4890DY-T1-E3 vs IRF7413GPBF
STS8NF30L 8A, 30V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics SI4890DY-T1-E3 vs STS8NF30L
IRF7821TR Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier SI4890DY-T1-E3 vs IRF7821TR

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