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Transistors / Small Signal Field-Effect Transistors / SI4866BDY-T1-GE3
Datasheets
SI4866BDY-T1-GE3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Small Signal Field-Effect Transistor, 21.5A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Part Details for SI4866BDY-T1-GE3 by Vishay Intertechnologies

Results Overview of SI4866BDY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI4866BDY-T1-GE3 Information

SI4866BDY-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI4866BDY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI4866BDY-T1-GE3
EBV Elektronik Trans MOSFET NCH 12V 161A 8Pin SOIC N TR (Alt: SI4866BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for SI4866BDY-T1-GE3

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SI4866BDY-T1-GE3 Part Data Attributes

Parametric Data
SI4866BDY-T1-GE3 Vishay Intertechnologies
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Compare Parts:
SI4866BDY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 21.5A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay

Alternate Parts for SI4866BDY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4866BDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4866BDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI9407BDY-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 4700 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8, FET General Purpose Small Signal SI4866BDY-T1-GE3 vs SI9407BDY-T1-GE3
SI4866BDY-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 21500 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8, FET General Purpose Small Signal SI4866BDY-T1-GE3 vs SI4866BDY-T1-GE3
SI9926BDY-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 SI4866BDY-T1-GE3 vs SI9926BDY-T1-E3
SI4100DY-T1-GE3 Vishay Intertechnologies $1.0089 Small Signal Field-Effect Transistor, 6.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 SI4866BDY-T1-GE3 vs SI4100DY-T1-GE3
SI4618DY-T1-GE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 SI4866BDY-T1-GE3 vs SI4618DY-T1-GE3
SI9926ADY Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4866BDY-T1-GE3 vs SI9926ADY
SI9926ADY-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4866BDY-T1-GE3 vs SI9926ADY-T1
SI9407BDY-T1-GE3 Vishay Intertechnologies $0.5049 Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 SI4866BDY-T1-GE3 vs SI9407BDY-T1-GE3

SI4866BDY-T1-GE3 Related Parts

SI4866BDY-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI4866BDY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.

  • To ensure proper soldering, use a soldering iron with a temperature of 260°C (500°F) and a solder with a melting point of 217°C (423°F). Apply a small amount of solder to the pins and reflow according to the recommended soldering profile.

  • The maximum operating temperature range for the SI4866BDY-T1-GE3 is -40°C to 150°C (-40°F to 302°F). However, the device is only guaranteed to meet specifications within the range of -40°C to 125°C (-40°F to 257°F).

  • Yes, the SI4866BDY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable.

  • To prevent ESD damage, handle the SI4866BDY-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or leads, and use ESD-safe packaging and storage materials.