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Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0444
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Newark | Mosfet, Dual, Complement, 60V, 4.5A/Soic Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2374 |
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$1.1100 / $1.6700 | Buy Now |
DISTI #
85W3210
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Newark | Npn/Pnp Mosfet, 60V, Soic, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:5.3A, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6790 / $0.8110 | Buy Now |
DISTI #
16P3742
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Newark | Npn/Pnp Mosfet, 60V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:5.3A, No. Of Pins:8Pins, Qualification:- Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.2300 | Buy Now |
DISTI #
SI4559ADY-T1-GE3
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Avnet Americas | Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4559ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel | 5000 |
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$0.4095 / $0.5202 | Buy Now |
DISTI #
SI4559ADY-T1-GE3
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Avnet Americas | Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4559ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.4095 / $0.5202 | Buy Now |
DISTI #
781-SI4559ADY-T1-GE3
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Mouser Electronics | MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR RoHS: Compliant | 19865 |
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$0.6460 / $1.2400 | Buy Now |
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Future Electronics | Si4559ADY Series 60 V 5.3A/3.9A 665 pF N/P-Channel Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 25000Reel |
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$0.4800 / $0.5100 | Buy Now |
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Future Electronics | Si4559ADY Series 60 V 5.3A/3.9A 665 pF N/P-Channel Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 15000Reel |
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$0.4800 / $0.5100 | Buy Now |
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Bristol Electronics | 4978 |
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RFQ | ||
DISTI #
SI4559ADY-T1-GE3
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TTI | MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 37500 In Stock |
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$0.3820 / $0.4260 | Buy Now |
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SI4559ADY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4559ADY-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 6 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 6.1 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 3.4 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4559ADY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4559ADY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI4559ADY-T1-E3 | TRANSISTOR 4.3 A, 60 V, 0.058 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | Vishay Siliconix | SI4559ADY-T1-GE3 vs SI4559ADY-T1-E3 |
SI4559ADY-T1-E3 | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | SI4559ADY-T1-GE3 vs SI4559ADY-T1-E3 |