Datasheets
SI4559ADY-T1-GE3 by:

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Part Details for SI4559ADY-T1-GE3 by Vishay Intertechnologies

Overview of SI4559ADY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI4559ADY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 57AJ0444
Newark Mosfet, Dual, Complement, 60V, 4.5A/Soic Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2374
  • 1 $1.6700
  • 10 $1.3900
  • 25 $1.3000
  • 50 $1.2100
  • 100 $1.1100
$1.1100 / $1.6700 Buy Now
DISTI # 85W3210
Newark Npn/Pnp Mosfet, 60V, Soic, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:5.3A, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.8110
  • 4,000 $0.7320
  • 6,000 $0.7050
  • 10,000 $0.6790
$0.6790 / $0.8110 Buy Now
DISTI # 16P3742
Newark Npn/Pnp Mosfet, 60V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:5.3A, No. Of Pins:8Pins, Qualification:- Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $1.2300
$1.2300 Buy Now
DISTI # SI4559ADY-T1-GE3
Avnet Americas Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4559ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel 5000
  • 2,500 $0.5202
  • 5,000 $0.5035
  • 10,000 $0.4868
  • 15,000 $0.4701
  • 20,000 $0.4519
  • 25,000 $0.4307
  • 250,000 $0.4095
$0.4095 / $0.5202 Buy Now
DISTI # SI4559ADY-T1-GE3
Avnet Americas Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4559ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.5202
  • 5,000 $0.5035
  • 10,000 $0.4868
  • 15,000 $0.4701
  • 20,000 $0.4519
  • 25,000 $0.4307
  • 250,000 $0.4095
$0.4095 / $0.5202 Buy Now
DISTI # 781-SI4559ADY-T1-GE3
Mouser Electronics MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR RoHS: Compliant 19865
  • 1 $1.2400
  • 10 $1.0700
  • 100 $0.8950
  • 250 $0.8670
  • 500 $0.7940
  • 1,000 $0.6620
  • 2,500 $0.6460
$0.6460 / $1.2400 Buy Now
Future Electronics Si4559ADY Series 60 V 5.3A/3.9A 665 pF N/P-Channel Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 25000
Reel
  • 2,500 $0.5100
  • 5,000 $0.5000
  • 7,500 $0.4950
  • 10,000 $0.4900
  • 12,500 $0.4800
$0.4800 / $0.5100 Buy Now
Future Electronics Si4559ADY Series 60 V 5.3A/3.9A 665 pF N/P-Channel Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 15000
Reel
  • 2,500 $0.5100
  • 5,000 $0.5000
  • 7,500 $0.4950
  • 10,000 $0.4900
  • 12,500 $0.4800
$0.4800 / $0.5100 Buy Now
Bristol Electronics   4978
RFQ
DISTI # SI4559ADY-T1-GE3
TTI MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 37500
In Stock
  • 2,500 $0.4260
  • 5,000 $0.4110
  • 10,000 $0.3820
$0.3820 / $0.4260 Buy Now
DISTI # SI4559ADY-T1-GE3
TME Transistor: N/P-MOSFET, TrenchFET®, unipolar, 60/-60V, 4.3/-3.2A Min Qty: 1 2950
  • 1 $0.7580
  • 5 $0.5950
  • 25 $0.5200
  • 100 $0.4760
  • 500 $0.4440
  • 2,500 $0.4220
$0.4220 / $0.7580 Buy Now
DISTI # SI4559ADY-T1-GE3
Avnet Asia Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R (Alt: SI4559ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days 0
  • 2,500 $1.0742
  • 5,000 $1.0593
  • 7,500 $1.0448
  • 12,500 $1.0307
  • 25,000 $1.0035
  • 62,500 $0.9778
  • 125,000 $0.9534
$0.9534 / $1.0742 Buy Now
DISTI # SI4559ADY-T1-GE3
EBV Elektronik Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R (Alt: SI4559ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 58m4.3A10V 3V250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS 35
  • 1 $1.1504
  • 10 $0.9956
  • 30 $0.8978
  • 100 $0.7980
  • 500 $0.7534
  • 1,000 $0.7334
$0.7334 / $1.1504 Buy Now

Part Details for SI4559ADY-T1-GE3

SI4559ADY-T1-GE3 CAD Models

SI4559ADY-T1-GE3 Part Data Attributes:

SI4559ADY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4559ADY-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 6 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 6.1 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 3.4 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4559ADY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4559ADY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4559ADY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4559ADY-T1-E3 TRANSISTOR 4.3 A, 60 V, 0.058 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power Vishay Siliconix SI4559ADY-T1-GE3 vs SI4559ADY-T1-E3
SI4559ADY-T1-E3 Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SI4559ADY-T1-GE3 vs SI4559ADY-T1-E3
Part Number Description Manufacturer Compare
IRF7343PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG SI4559ADY-T1-GE3 vs IRF7343PBF
FDS4559-F085 60V Complementary PowerTrench® MOSFET, SO 8L NB, 2500-REEL, Automotive Qualified onsemi SI4559ADY-T1-GE3 vs FDS4559-F085
IRF7343 Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier SI4559ADY-T1-GE3 vs IRF7343
SI4559ADY-T1-E3 Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SI4559ADY-T1-GE3 vs SI4559ADY-T1-E3
IRF7343TR Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG SI4559ADY-T1-GE3 vs IRF7343TR
AUIRF7343QTR Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG SI4559ADY-T1-GE3 vs AUIRF7343QTR
SI4559ADY-T1-E3 TRANSISTOR 4.3 A, 60 V, 0.058 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power Vishay Siliconix SI4559ADY-T1-GE3 vs SI4559ADY-T1-E3
FDS4559L86Z Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4559ADY-T1-GE3 vs FDS4559L86Z
FDS4559F011 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4559ADY-T1-GE3 vs FDS4559F011

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