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Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R5040
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Newark | Mosfet, P Channel, -30V, -6A, Soic-8, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:5W, Product Range:-Rohs Compliant: Yes |Vishay SI4485DY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2120 / $0.2820 | Buy Now |
DISTI #
05W6944
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Newark | Mosfet, P Channel, -30V, -6A, Soic-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Vishay SI4485DY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2760 | Buy Now |
DISTI #
SI4485DY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 5.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4485DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.1882 / $0.2000 | Buy Now |
DISTI #
781-SI4485DY-T1-GE3
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Mouser Electronics | MOSFETs 30V 6.0A 5.0W 42mohm @ 10V RoHS: Compliant | 4748 |
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$0.2000 / $0.7400 | Buy Now |
DISTI #
V36:1790_07432081
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Arrow Electronics | Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Date Code: 2421 | Americas - 2500 |
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$0.1801 / $0.1990 | Buy Now |
DISTI #
V72:2272_07432081
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Arrow Electronics | Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2224 Container: Cut Strips | Americas - 74 |
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$0.2010 / $0.3059 | Buy Now |
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Future Electronics | Single P-Channel 30 V 0.042 Ohm 5 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 2500Reel |
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$0.1800 / $0.1930 | Buy Now |
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Future Electronics | Single P-Channel 30 V 0.042 Ohm 5 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.1800 / $0.1930 | Buy Now |
DISTI #
83600422
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Verical | Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2421 | Americas - 2500 |
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$0.1801 / $0.1990 | Buy Now |
DISTI #
62425123
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Verical | Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 35 Package Multiple: 1 Date Code: 2224 | Americas - 74 |
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$0.2010 | Buy Now |
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SI4485DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4485DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4485DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4485DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SI4431DY | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | SI4485DY-T1-GE3 vs SI4431DY |
SI4431DYL86Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | SI4485DY-T1-GE3 vs SI4431DYL86Z |
SI5403DC-T1-GE3 | Vishay Intertechnologies | $0.5105 | Power Field-Effect Transistor, 6A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | SI4485DY-T1-GE3 vs SI5403DC-T1-GE3 |
ZXMP3A16N8TA | Diodes Incorporated | $0.6065 | Small Signal Field-Effect Transistor, 5.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | SI4485DY-T1-GE3 vs ZXMP3A16N8TA |