Part Details for SI4456DY-T1-E3 by Vishay Intertechnologies
Overview of SI4456DY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Communication and Networking
Robotics and Drones
Price & Stock for SI4456DY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64M1992
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Newark | N Channel Mosfet, 40V, 33A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Vishay SI4456DY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.8000 | Buy Now |
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DISTI #
SI4456DY-T1-E3
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Avnet Americas | Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.9004 / $1.1439 | Buy Now |
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DISTI #
SI4456DY-T1-E3
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Avnet Americas | Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.9004 / $1.1139 | Buy Now |
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DISTI #
781-SI4456DY-T1-E3
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Mouser Electronics | MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS: Compliant | 3769 |
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$1.1600 / $2.3900 | Buy Now |
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Future Electronics | Single N-Channel 40 V 0.0038 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8850 | Buy Now |
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Future Electronics | Single N-Channel 40 V 0.0038 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8850 | Buy Now |
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DISTI #
SI4456DY-T1-E3
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TTI | MOSFET 40V 33A 7.8W 3.8mohm @ 10V pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
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$0.9200 / $0.9400 | Buy Now |
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Chip 1 Exchange | INSTOCK | 2650 |
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RFQ | |
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DISTI #
SI4456DY-T1-E3
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EBV Elektronik | (Alt: SI4456DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI4456DY-T1-E3
SI4456DY-T1-E3 CAD Models
SI4456DY-T1-E3 Part Data Attributes:
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SI4456DY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4456DY-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 23A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 7.8 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |