Part Details for SI4447DY-T1-GE3 by Vishay Intertechnologies
Results Overview of SI4447DY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SI4447DY-T1-GE3 Information
SI4447DY-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI4447DY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84R8052
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Newark | P Ch Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3.... more RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
15R5021
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Newark | P Ch Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Cu... more RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
V72:2272_09216496
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Arrow Electronics | Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2225 Container: Cut Strips | Americas - 49 |
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$0.2819 / $0.3223 | Buy Now |
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DISTI #
62449358
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Verical | Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 21 Package Multiple: 1 Date Code: 2225 | Americas - 49 |
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$0.2819 / $0.3219 | Buy Now |
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DISTI #
SI4447DY-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -40V, -4.5A, Idm: -30A Min Qty: 1 | 0 |
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$0.4200 / $0.7690 | RFQ |
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DISTI #
SI4447DY-T1-GE3
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IBS Electronics | TRANS MOSFET P-CH 40V 3.3A 8-PIN SOIC N T/R Min Qty: 2500 Package Multiple: 1 | 0 |
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$0.4988 / $0.5121 | Buy Now |
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DISTI #
SI4447DY-T1-GE3
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Avnet Asia | Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R (Alt: SI4447DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 |
12500 |
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RFQ | |
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DISTI #
SI4447DY-T1-GE3
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EBV Elektronik | Trans MOSFET PCH 40V 33A 8Pin SOIC N TR (Alt: SI4447DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 40V 3.9A 0.05410V4.5A 800mV 1 piece P-channel SO-8 MOSFETs ROHS | 587 |
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$0.2214 / $0.4470 | Buy Now |
Part Details for SI4447DY-T1-GE3
SI4447DY-T1-GE3 CAD Models
SI4447DY-T1-GE3 Part Data Attributes
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SI4447DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4447DY-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 3.3A I(D), 40V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 0.054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |