Part Details for SI4434DY-T1-GE3 by Vishay Intertechnologies
Overview of SI4434DY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4434DY-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4434DY-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4434DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$1.3412 / $1.4250 | Buy Now |
DISTI #
SI4434DY-T1-GE3
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EBV Elektronik | Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R (Alt: SI4434DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI4434DY-T1-GE3
SI4434DY-T1-GE3 CAD Models
SI4434DY-T1-GE3 Part Data Attributes
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SI4434DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4434DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 2.1 A | |
Drain-source On Resistance-Max | 0.155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.1 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI4434DY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4434DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4434DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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SI4434DY-T1-E3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | SI4434DY-T1-GE3 vs SI4434DY-T1-E3 |