Datasheets
SI4434DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Part Details for SI4434DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4434DY-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI4434DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI4434DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4434DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.4250
  • 5,000 $1.4022
  • 10,000 $1.3801
  • 15,000 $1.3571
  • 20,000 $1.3412
$1.3412 / $1.4250 Buy Now
DISTI # SI4434DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R (Alt: SI4434DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI4434DY-T1-GE3

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SI4434DY-T1-GE3 Part Data Attributes

SI4434DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4434DY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 2.1 A
Drain-source On Resistance-Max 0.155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4434DY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4434DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4434DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI4434DY-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 SI4434DY-T1-GE3 vs SI4434DY-T1-E3
Part Number Manufacturer Composite Price Description Compare
SI4434DY-T1-E3 Vishay Intertechnologies $1.4168 Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8 SI4434DY-T1-GE3 vs SI4434DY-T1-E3
HAT2089R-EL-E Renesas Electronics Corporation Check for Price Nch Single Power Mosfet 250V 2A 600Mohm Sop8, SOP, /Embossed Tape SI4434DY-T1-GE3 vs HAT2089R-EL-E
SI4434DY-T1-GE3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 SI4434DY-T1-GE3 vs SI4434DY-T1-GE3

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