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Transistors / Small Signal Field-Effect Transistors / SI4410DY,518
Datasheets
SI4410DY,518 by:
NXP Semiconductors
Nexperia
NXP Semiconductors
Not Found

SI4410DY - N-channel TrenchMOS logic level FET SOIC 8-Pin

Part Details for SI4410DY,518 by NXP Semiconductors

Results Overview of SI4410DY,518 by NXP Semiconductors

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SI4410DY,518 Information

SI4410DY,518 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI4410DY,518

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, SO8 RoHS: Compliant Status: Obsolete Min Qty: 1 192
  • 1 $0.3250
  • 25 $0.3185
  • 100 $0.3055
  • 500 $0.2925
  • 1,000 $0.2763
$0.2763 / $0.3250 Buy Now
Vyrian Transistors 192
RFQ

Part Details for SI4410DY,518

SI4410DY,518 CAD Models

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SI4410DY,518 Part Data Attributes

Parametric Data
SI4410DY,518 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
SI4410DY,518 NXP Semiconductors SI4410DY - N-channel TrenchMOS logic level FET SOIC 8-Pin
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Package Description PLASTIC, MS-012, SOP-8
Pin Count 8
Manufacturer Package Code SOT96-1
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4410DY,518

This table gives cross-reference parts and alternative options found for SI4410DY,518. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4410DY,518, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI4410DY International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4410DY,518 vs SI4410DY
SI4410DY-T1-REVA Vishay Intertechnologies Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET SI4410DY,518 vs SI4410DY-T1-REVA
SI4410DYPBF Infineon Technologies AG $0.5893 Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 SI4410DY,518 vs SI4410DYPBF
SI4410DYS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4410DY,518 vs SI4410DYS62Z
SI4410DY-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SI4410DY,518 vs SI4410DY-T1
Part Number Manufacturer Composite Price Description Compare
SI4410DYD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 SI4410DY,518 vs SI4410DYD84Z
SI4410DYTR International Rectifier Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4410DY,518 vs SI4410DYTR
SI4410DYL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 SI4410DY,518 vs SI4410DYL99Z
934056382118 NXP Semiconductors Check for Price 10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SMD, SO-8 SI4410DY,518 vs 934056382118
SI4410DY_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 SI4410DY,518 vs SI4410DY_NL
FDS4897C Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 SI4410DY,518 vs FDS4897C
SI4410DY,518 Nexperia Check for Price SI4410DY - N-channel TrenchMOS logic level FET@en-us SOIC 8-Pin SI4410DY,518 vs SI4410DY,518
MMSF10N03Z Motorola Semiconductor Products Check for Price Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIATURE, CASE 751-05, SO-8 SI4410DY,518 vs MMSF10N03Z
APM9934KC-TRG American Power Devices Inc Check for Price Power Field-Effect Transistor, 9A I(D), 20V, 0.02ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 SI4410DY,518 vs APM9934KC-TRG
SI5402DC-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8 SI4410DY,518 vs SI5402DC-T1-E3

SI4410DY,518 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the analog and digital sections separate, and use a common mode choke to filter the power supply.

  • Ensure the VCC pin is connected to a stable 3.3V power supply, and the VBIAS pin is connected to a 1.8V voltage source. Also, ensure the input signals are within the recommended common-mode voltage range.

  • The SI4410DY can support data rates up to 100 Mbps, but the actual data rate depends on the specific application, PCB layout, and signal integrity.

  • Use oscilloscopes and signal analyzers to measure signal quality, and check for proper termination, impedance matching, and signal routing. Also, ensure the power supply is clean and stable.

  • The SI4410DY is rated for operation up to 125°C, but the actual operating temperature range depends on the specific application and PCB design. Ensure proper thermal management and heat dissipation.