Part Details for SI4384DY-T1-GE3 by Vishay Intertechnologies
Overview of SI4384DY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4384DY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Onlinecomponents.com | MOSFET Transistor - N-Channel - 30 V Drain to Source Voltage - 10A Continuous Drain Current - ±20V Vgs (Max) - 8-SOIC Package - Surface Mount. RoHS: Compliant |
2289 Partner Stock |
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$1.0300 / $1.7000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 2975 |
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RFQ |
Part Details for SI4384DY-T1-GE3
SI4384DY-T1-GE3 CAD Models
SI4384DY-T1-GE3 Part Data Attributes
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SI4384DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4384DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.1 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4384DY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4384DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4384DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| SI4384DY-T1-GE3 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4384DY-T1-GE3 vs SI4384DY-T1-GE3 |
| SI4384DY-T1-E3 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOP-8 | Vishay Intertechnologies | SI4384DY-T1-GE3 vs SI4384DY-T1-E3 |