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Transistors Power Field-Effect Transistors SI4228DY-T1-GE3

SI4228DY-T1-GE3
Description: Power Field-Effect Transistor, 8A I(D), 25V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Overview of SI4228DY-T1-GE3 by Vishay Intertechnologies

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  • Distributor Offerings: ( 11 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for SI4228DY-T1-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 04X9760
Newark Mosfet, Dual N Channel, 25V, 8A, Soic-8, Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:8A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Vishay SI4228DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.4900
$0.4900 Buy Now
DISTI # 86R3884
Newark Mosfet, Dual N-Ch, 25V, 8A, Soic-8, Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:8A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Vishay SI4228DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.3930
  • 4,000 $0.3530
  • 6,000 $0.3400
  • 10,000 $0.3330
$0.3330 / $0.3930 Buy Now
DISTI # SI4228DY-T1-GE3
Avnet Americas DUAL N-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SI4228DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.4288
  • 5,000 $0.4150
  • 10,000 $0.4012
  • 15,000 $0.3850
  • 20,000 $0.3725
  • 25,000 $0.3550
  • 250,000 $0.3375
$0.3375 / $0.4288 Buy Now
DISTI # SI4228DY-T1-GE3
Avnet Americas DUAL N-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SI4228DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4288
  • 5,000 $0.4150
  • 10,000 $0.4012
  • 15,000 $0.3850
  • 20,000 $0.3725
  • 25,000 $0.3550
  • 250,000 $0.3375
$0.3375 / $0.4288 Buy Now
DISTI # 78-SI4228DY-T1-GE3
Mouser Electronics MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant 71506
  • 1 $0.6600
  • 10 $0.5620
  • 100 $0.4610
  • 500 $0.4070
  • 1,000 $0.3510
  • 2,500 $0.3360
  • 5,000 $0.3230
  • 10,000 $0.3130
  • 25,000 $0.3120
$0.3120 / $0.6600 Buy Now
DISTI # V72:2272_09216463
Arrow Electronics Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 1915 Container: Cut Strips Americas - 9
  • 1 $0.3206
$0.3206 Buy Now
Future Electronics Dual N-Channel 25 V 0.018 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3350
  • 5,000 $0.3300
  • 7,500 $0.3250
  • 10,000 $0.3250
  • 12,500 $0.3150
$0.3150 / $0.3350 Buy Now
Future Electronics Dual N-Channel 25 V 0.018 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel 0
Reel
  • 2,500 $0.3350
  • 5,000 $0.3300
  • 7,500 $0.3250
  • 10,000 $0.3250
  • 12,500 $0.3150
$0.3150 / $0.3350 Buy Now
DISTI # SI4228DY-T1-GE3
TTI MOSFETs 25V Vds 12V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $0.3380
  • 5,000 $0.3320
  • 7,500 $0.3250
  • 12,500 $0.3190
  • 25,000 $0.3130
$0.3130 / $0.3380 Buy Now
DISTI # SI4228DY-T1-GE3
TME Transistor: N-MOSFET x2, TrenchFET®, unipolar, 25V, 8A, Idm: 50A, 2W Min Qty: 1 0
  • 1 $0.7700
  • 5 $0.6330
  • 25 $0.5600
  • 100 $0.5020
  • 500 $0.4690
$0.4690 / $0.7700 RFQ
DISTI # SI4228DY-T1-GE3
EBV Elektronik Transistor MOSFET Array Dual N-CH 25V 8A 8-Pin SOIC T/R (Alt: SI4228DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SI4228DY-T1-GE3 by Vishay Intertechnologies
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Part Data Attributes for SI4228DY-T1-GE3 by Vishay Intertechnologies
Parametric Data

SI4228DY-T1-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
11.25 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
Drain Current-Max (ID)
8 A
Drain-source On Resistance-Max
0.02 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
76 pF
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3.1 W
Pulsed Drain Current-Max (IDM)
50 A
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
50 ns
Turn-on Time-Max (ton)
32 ns
Want to compare parts?
  1. SI4228DY-T1-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 8A I(D), 25V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
    VS

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