-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SI4204DY-T1-GE3 by Vishay Intertechnologies
Overview of SI4204DY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Smart Cities
Price & Stock for SI4204DY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
97W2648
|
Newark | Dual Mosfet, Dual N Channel, 19.8 A, 20 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant: Yes |Vishay SI4204DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 10732 |
|
$1.2000 / $1.9400 | Buy Now |
|
DISTI #
SI4204DY-T1-GE3
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 19.8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4204DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.8235 / $1.0461 | Buy Now |
|
DISTI #
SI4204DY-T1-GE3
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 19.8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4204DY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
|
$0.8235 / $1.0187 | Buy Now |
|
DISTI #
781-SI4204DY-T1-GE3
|
Mouser Electronics | MOSFET 20V Vds 20V Vgs SO-8 RoHS: Compliant | 27842 |
|
$0.7620 / $1.6400 | Buy Now |
|
|
Future Electronics | DUAL N-CH MOSFET SO-8 BWL 20V 4.6MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
|
$0.7650 / $0.7950 | Buy Now |
|
|
Future Electronics | DUAL N-CH MOSFET SO-8 BWL 20V 4.6MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.7650 / $0.7950 | Buy Now |
|
DISTI #
SI4204DY-T1-GE3
|
TTI | MOSFET 20V Vds 20V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 2500 In Stock |
|
$0.7600 / $0.7900 | Buy Now |
|
DISTI #
SI4204DY-T1-GE3
|
TME | Transistor: N-MOSFET, unipolar, 20V, 15.5A, Idm: 50A, 2.1W, SO8 Min Qty: 1 | 0 |
|
$1.1500 / $1.7300 | RFQ |
|
DISTI #
SI4204DY-T1-GE3
|
Avnet Asia | Transistor MOSFET Array Dual N-CH 20V 19.8A 8-Pin SOIC T/R (Alt: SI4204DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
SI4204DY-T1-GE3
|
EBV Elektronik | Transistor MOSFET Array Dual N-CH 20V 19.8A 8-Pin SOIC T/R (Alt: SI4204DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SI4204DY-T1-GE3
SI4204DY-T1-GE3 CAD Models
SI4204DY-T1-GE3 Part Data Attributes:
|
|
SI4204DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4204DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 19.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 19.8 A | |
| Drain-source On Resistance-Max | 0.0046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.25 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |