-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 0.0192A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
57AJ0437
|
Newark | Mosfet, N-Ch, 40V, 27.2A, Soic Rohs Compliant: Yes |Vishay SI4122DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 15004 |
|
$1.6800 / $2.5200 | Buy Now |
DISTI #
16P3726
|
Newark | N Channel Mosfet, 40V, 27.2A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:27.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:25V, Power Dissipation:3W Rohs Compliant: Yes |Vishay SI4122DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.1000 / $1.1200 | Buy Now |
DISTI #
SI4122DY-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$1.0800 / $1.3720 | Buy Now |
DISTI #
SI4122DY-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
|
$1.0800 / $1.3360 | Buy Now |
DISTI #
781-SI4122DY-T1-GE3
|
Mouser Electronics | MOSFET 40V Vds 25V Vgs SO-8 RoHS: Compliant | 6749 |
|
$0.9810 / $2.2600 | Buy Now |
|
Future Electronics | Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.9800 | Buy Now |
|
Future Electronics | Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.9800 | Buy Now |
DISTI #
SI4122DY-T1-GE3
|
TTI | MOSFET 40V Vds 25V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 7500 In Stock |
|
$0.9700 / $1.0000 | Buy Now |
|
ComSIT USA | Electronic Component RoHS: Compliant | Europe - 880 |
|
RFQ | |
DISTI #
SI4122DY-T1-GE3
|
Avnet Asia | Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | 0 |
|
$1.0596 / $1.1939 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI4122DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4122DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.0192A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 0.0192 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 225 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |