Datasheets
SI4122DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 0.0192A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Part Details for SI4122DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4122DY-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI4122DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 57AJ0437
Newark Mosfet, N-Ch, 40V, 27.2A, Soic Rohs Compliant: Yes |Vishay SI4122DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 15004
  • 1 $2.5200
  • 10 $2.1200
  • 25 $1.9900
  • 50 $1.8600
  • 100 $1.7300
  • 250 $1.6800
$1.6800 / $2.5200 Buy Now
DISTI # 16P3726
Newark N Channel Mosfet, 40V, 27.2A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:27.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:25V, Power Dissipation:3W Rohs Compliant: Yes |Vishay SI4122DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $1.1200
  • 5,000 $1.1000
  • 10,000 $1.1000
$1.1000 / $1.1200 Buy Now
DISTI # SI4122DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.3720
  • 5,000 $1.3280
  • 10,000 $1.2840
  • 15,000 $1.2320
  • 20,000 $1.1920
  • 25,000 $1.1360
  • 250,000 $1.0800
$1.0800 / $1.3720 Buy Now
DISTI # SI4122DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $1.3360
  • 10 $1.3040
  • 30 $1.2720
  • 50 $1.2000
  • 100 $1.1680
  • 250 $1.1360
  • 500 $1.0800
$1.0800 / $1.3360 Buy Now
DISTI # 781-SI4122DY-T1-GE3
Mouser Electronics MOSFET 40V Vds 25V Vgs SO-8 RoHS: Compliant 6749
  • 1 $2.2600
  • 10 $1.8800
  • 100 $1.5000
  • 250 $1.4800
  • 500 $1.2700
  • 1,000 $1.0800
  • 2,500 $1.0100
  • 5,000 $0.9810
$0.9810 / $2.2600 Buy Now
Future Electronics Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.9800
$0.9800 Buy Now
Future Electronics Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.9800
$0.9800 Buy Now
DISTI # SI4122DY-T1-GE3
TTI MOSFET 40V Vds 25V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 7500
In Stock
  • 2,500 $1.0000
  • 5,000 $0.9700
$0.9700 / $1.0000 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Europe - 880
RFQ
DISTI # SI4122DY-T1-GE3
Avnet Asia Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days 0
  • 2,500 $1.1939
  • 5,000 $1.1774
  • 7,500 $1.1612
  • 12,500 $1.1455
  • 25,000 $1.1154
  • 62,500 $1.0868
  • 125,000 $1.0596
$1.0596 / $1.1939 Buy Now
DISTI # SI4122DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R (Alt: SI4122DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation MOSFET N-CH 40V 27.2A 8SO RoHS: Compliant Min Qty: 1 Package Multiple: 1 983
  • 1 $2.2500
  • 250 $1.5700
  • 500 $1.2500
$1.2500 / $2.2500 Buy Now

Part Details for SI4122DY-T1-GE3

SI4122DY-T1-GE3 CAD Models

SI4122DY-T1-GE3 Part Data Attributes:

SI4122DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4122DY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.0192A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 0.0192 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 225 pF
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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