Part Details for SI3588DV-T1-E3 by Vishay Siliconix
Overview of SI3588DV-T1-E3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SI3588DV-T1-E3
SI3588DV-T1-E3 CAD Models
SI3588DV-T1-E3 Part Data Attributes
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SI3588DV-T1-E3
Vishay Siliconix
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Datasheet
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SI3588DV-T1-E3
Vishay Siliconix
TRANSISTOR 2500 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.15 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3588DV-T1-E3
This table gives cross-reference parts and alternative options found for SI3588DV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3588DV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC6327C | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3588DV-T1-E3 vs FDC6327C |
| FDC6327C | 2700mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3588DV-T1-E3 vs FDC6327C |
| FDC6333C | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3588DV-T1-E3 vs FDC6333C |
| SI3585CDV-T1-GE3 | TRANSISTOR 3900 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | SI3588DV-T1-E3 vs SI3585CDV-T1-GE3 |
| SI3588DV-T1-E3 | Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | Vishay Intertechnologies | SI3588DV-T1-E3 vs SI3588DV-T1-E3 |
| FDC6321C | Dual N & P Channel Digital FET 25V, 3000-REEL | onsemi | SI3588DV-T1-E3 vs FDC6321C |
| IRF5851TR | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | International Rectifier | SI3588DV-T1-E3 vs IRF5851TR |
| FDC6321C | 0.68mA, 25V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3588DV-T1-E3 vs FDC6321C |
| BSL308CL6327HTSA1 | Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 | Infineon Technologies AG | SI3588DV-T1-E3 vs BSL308CL6327HTSA1 |
| FDC6432SH | 2400mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3588DV-T1-E3 vs FDC6432SH |