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Part Details for SI3585CDV-T1-GE3 by Vishay Siliconix
Overview of SI3585CDV-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI3585CDV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI3585CDV-T1-GE3CT-ND
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DigiKey | MOSFET N/P-CH 20V 3.9A 6TSOP Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11088 In Stock |
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$0.1539 / $0.5300 | Buy Now |
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New Advantage Corporation | Dual N / P-Channel 20 V 0.058/0.195 O 4.8 nC Surface Mount Power Mosfet - TSOP- RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 78000 |
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$0.1933 / $0.2071 | Buy Now |
Part Details for SI3585CDV-T1-GE3
SI3585CDV-T1-GE3 CAD Models
SI3585CDV-T1-GE3 Part Data Attributes
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SI3585CDV-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI3585CDV-T1-GE3
Vishay Siliconix
TRANSISTOR 3900 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6, FET General Purpose Small Signal
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 0.058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3585CDV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3585CDV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3585CDV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC6327C | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3585CDV-T1-GE3 vs FDC6327C |
| FDC6327C | 2700mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3585CDV-T1-GE3 vs FDC6327C |
| FDC6333C | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3585CDV-T1-GE3 vs FDC6333C |
| SI3588DV-T1-E3 | Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | Vishay Intertechnologies | SI3585CDV-T1-GE3 vs SI3588DV-T1-E3 |
| FDC6321C | Dual N & P Channel Digital FET 25V, 3000-REEL | onsemi | SI3585CDV-T1-GE3 vs FDC6321C |
| IRF5851TR | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | International Rectifier | SI3585CDV-T1-GE3 vs IRF5851TR |
| SI3588DV-T1-E3 | TRANSISTOR 2500 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | SI3585CDV-T1-GE3 vs SI3588DV-T1-E3 |
| FDC6321C | 0.68mA, 25V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3585CDV-T1-GE3 vs FDC6321C |
| BSL308CL6327HTSA1 | Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 | Infineon Technologies AG | SI3585CDV-T1-GE3 vs BSL308CL6327HTSA1 |
| FDC6432SH | 2400mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3585CDV-T1-GE3 vs FDC6432SH |