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Transistors / Small Signal Field-Effect Transistors / SI3552DV-T1-GE3
Datasheets
SI3552DV-T1-GE3 by:

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, TSOP-6

Part Details for SI3552DV-T1-GE3 by Vishay Intertechnologies

Overview of SI3552DV-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI3552DV-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 79AH6526
Newark 30V N & P Ch (D-S) Trench Rohs Compliant: No |Vishay SI3552DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 6000
  • 1 $0.2990
$0.2990 Buy Now
DISTI # 35R0049
Newark Dual N/P Channel Mosfet, 30V, Tsop, Channel Type:N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:2.5A, Continuous Drain Current Id P Channel:1.8A Rohs Compliant: Yes |Vishay SI3552DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3700
  • 5,000 $0.3620
  • 10,000 $0.3340
  • 20,000 $0.3110
  • 30,000 $0.2900
  • 50,000 $0.2780
$0.2780 / $0.3700 Buy Now
DISTI # 35R6216
Newark Dual N/P Channel Mosfet, 30V, Tsop, Channel Type:N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:2.5A, Continuous Drain Current Id P Channel:1.8A Rohs Compliant: Yes |Vishay SI3552DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.3900
$0.3900 Buy Now
DISTI # SI3552DV-T1-GE3
Avnet Americas Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3552DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 6000
  • 3,000 $0.2488
  • 6,000 $0.2447
  • 12,000 $0.2404
  • 18,000 $0.2362
  • 24,000 $0.2321
$0.2321 / $0.2488 Buy Now
DISTI # 781-SI3552DV-GE3
Mouser Electronics MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR RoHS: Compliant 31000
  • 1 $0.6400
  • 10 $0.5710
  • 100 $0.4280
  • 500 $0.3650
  • 1,000 $0.3160
  • 3,000 $0.2870
  • 6,000 $0.2740
  • 9,000 $0.2660
  • 24,000 $0.2650
$0.2650 / $0.6400 Buy Now
Future Electronics 30V N & P CH (D-S) TRENCH RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2800
  • 6,000 $0.2750
  • 9,000 $0.2700
  • 12,000 $0.2650
  • 15,000 $0.2600
$0.2600 / $0.2800 Buy Now
Future Electronics 30V N & P CH (D-S) TRENCH RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2800
  • 6,000 $0.2750
  • 9,000 $0.2700
  • 12,000 $0.2650
  • 15,000 $0.2600
$0.2600 / $0.2800 Buy Now
DISTI # SI3552DV-T1-GE3
TTI MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 12000
In Stock
  • 3,000 $0.2840
  • 6,000 $0.2710
  • 9,000 $0.2630
  • 30,000 $0.2580
$0.2580 / $0.2840 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 2
  • 1 $2.3100
  • 100 $1.7300
  • 1,000 $1.5000
$1.5000 / $2.3100 Buy Now
DISTI # SI3552DV-T1-GE3
EBV Elektronik Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R (Alt: SI3552DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC TSOP-6-1.7mm MOSFETs ROHS 2099
  • 1 $0.6073
  • 10 $0.5029
  • 30 $0.4521
  • 100 $0.3999
  • 500 $0.3701
  • 1,000 $0.3537
$0.3537 / $0.6073 Buy Now
Sense Electronic Company Limited TSOP6 1304
RFQ

Part Details for SI3552DV-T1-GE3

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SI3552DV-T1-GE3 Part Data Attributes:

Parametric Data
SI3552DV-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI3552DV-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, TSOP-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Turn-off Time-Max (toff) 28 ns
Turn-on Time-Max (ton) 25 ns

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