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Transistors Small Signal Field-Effect Transistors SI3458BDV-T1-E3

Transistors
SI3458BDV-T1-E3
Description: TRANSISTOR 3200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

Overview of SI3458BDV-T1-E3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics

Available Datasheets

Part # Manufacturer Description Datasheet
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Price & Stock for SI3458BDV-T1-E3 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # SI3458BDV-T1-E3CT-ND
DigiKey MOSFET N-CH 60V 4.1A 6TSOP Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6555
In Stock
  • 1 $0.8700
  • 10 $0.7550
  • 100 $0.5227
  • 500 $0.4367
  • 1,000 $0.3717
  • 3,000 $0.3310
  • 6,000 $0.3136
  • 9,000 $0.2904
  • 30,000 $0.2875
$0.2875 / $0.8700 Buy Now
DISTI # 70459521
RS 60V 4.1A 3.3W 100mohm @ 10V | Siliconix / Vishay SI3458BDV-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.5330
  • 30,000 $0.5070
  • 150,000 $0.4800
  • 300,000 $0.4530
$0.4530 / $0.5330 RFQ

CAD Models for SI3458BDV-T1-E3 by Vishay Siliconix
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Part Data Attributes for SI3458BDV-T1-E3 by Vishay Siliconix
Parametric Data

SI3458BDV-T1-E3
Vishay Siliconix
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
4.1 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
20 pF
JESD-30 Code
R-PDSO-G6
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3.3 W
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Pure Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
35 ns
Turn-on Time-Max (ton)
55 ns
Want to compare parts?
  1. SI3458BDV-T1-E3
    Vishay Siliconix
    TRANSISTOR 3200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
    VS

Alternate Parts for SI3458BDV-T1-E3

This table gives cross-reference parts and alternative options found for SI3458BDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3458BDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SI3458BDV-T1-GE3 TRANSISTOR 3200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal Vishay Siliconix SI3458BDV-T1-E3 vs SI3458BDV-T1-GE3
SI3458BDV-T1-GE3 Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3458BDV-T1-E3 vs SI3458BDV-T1-GE3
Part Number Description Manufacturer Compare
SI3458BDV-T1-GE3 TRANSISTOR 3200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal Vishay Siliconix SI3458BDV-T1-E3 vs SI3458BDV-T1-GE3
SI3458BDV-T1-GE3 Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3458BDV-T1-E3 vs SI3458BDV-T1-GE3
SI3458BDV-T1-E3 Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3458BDV-T1-E3 vs SI3458BDV-T1-E3
RQ5L030SNTL Small Signal Field-Effect Transistor, ROHM Semiconductor SI3458BDV-T1-E3 vs RQ5L030SNTL

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