Datasheets
SI3457BDV-T1-E3 by:

TRANSISTOR 3700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

Part Details for SI3457BDV-T1-E3 by Vishay Siliconix

Overview of SI3457BDV-T1-E3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI3457BDV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 70026101
RS MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.044Ohm, ID -3.7A, TSOP-6,PD 1.14W, VGS+/-20V | Siliconix / Vishay SI3457BDV-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.5330
  • 30,000 $0.5070
  • 150,000 $0.4800
  • 300,000 $0.4530
$0.4530 / $0.5330 RFQ
Bristol Electronics   Min Qty: 6 860
  • 6 $0.9000
  • 24 $0.5850
  • 87 $0.3375
  • 298 $0.2880
  • 644 $0.2520
$0.2520 / $0.9000 Buy Now
Quest Components 3700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 688
  • 1 $1.2000
  • 101 $0.3600
  • 557 $0.3120
$0.3120 / $1.2000 Buy Now

Part Details for SI3457BDV-T1-E3

SI3457BDV-T1-E3 CAD Models

SI3457BDV-T1-E3 Part Data Attributes:

SI3457BDV-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI3457BDV-T1-E3 Vishay Siliconix TRANSISTOR 3700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.7 A
Drain-source On Resistance-Max 0.054 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI3457BDV-T1-E3

This table gives cross-reference parts and alternative options found for SI3457BDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3457BDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI3457BDV-T1 Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Vishay Siliconix SI3457BDV-T1-E3 vs SI3457BDV-T1
Part Number Description Manufacturer Compare
FDS6990AS_NL Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation SI3457BDV-T1-E3 vs FDS6990AS_NL
2N6485 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI3457BDV-T1-E3 vs 2N6485
2N5197 Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN InterFET Corporation SI3457BDV-T1-E3 vs 2N5197
SI3457CDV-T1-GE3 Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3457BDV-T1-E3 vs SI3457CDV-T1-GE3
UPA1917TE-A 6000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN Renesas Electronics Corporation SI3457BDV-T1-E3 vs UPA1917TE-A
NTGS4111PT1 3700mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 318G-02, TSOP-6 onsemi SI3457BDV-T1-E3 vs NTGS4111PT1
FDW2503N Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8 Fairchild Semiconductor Corporation SI3457BDV-T1-E3 vs FDW2503N
FDS6990A_NL Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI3457BDV-T1-E3 vs FDS6990A_NL
2N5908 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, Solitron Devices Inc SI3457BDV-T1-E3 vs 2N5908
ZXMD65N02N8TA Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Diodes Incorporated SI3457BDV-T1-E3 vs ZXMD65N02N8TA

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