Datasheets
SI3456DDV-T1-E3 by:

TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

Part Details for SI3456DDV-T1-E3 by Vishay Siliconix

Overview of SI3456DDV-T1-E3 by Vishay Siliconix

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Financial Technology (Fintech) Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for SI3456DDV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI3456DDV-T1-E3CT-ND
DigiKey MOSFET N-CH 30V 6.3A 6TSOP Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5040
In Stock
  • 1 $0.4100
  • 10 $0.3180
  • 100 $0.1909
  • 500 $0.1768
  • 1,000 $0.1202
  • 3,000 $0.1106
  • 6,000 $0.1061
  • 9,000 $0.0954
  • 30,000 $0.0940
  • 75,000 $0.0884
$0.0884 / $0.4100 Buy Now

Part Details for SI3456DDV-T1-E3

SI3456DDV-T1-E3 CAD Models

SI3456DDV-T1-E3 Part Data Attributes:

SI3456DDV-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI3456DDV-T1-E3 Vishay Siliconix TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.7 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI3456DDV-T1-E3

This table gives cross-reference parts and alternative options found for SI3456DDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3456DDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PMN45EN,135 PMN45EN - N-channel TrenchMOS logic level FET TSOP 6-Pin NXP Semiconductors SI3456DDV-T1-E3 vs PMN45EN,135
PMN45EN 5200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-74, TSOP-6 NXP Semiconductors SI3456DDV-T1-E3 vs PMN45EN
PMN45EN,165 PMN45EN - N-channel TrenchMOS logic level FET TSOP 6-Pin NXP Semiconductors SI3456DDV-T1-E3 vs PMN45EN,165
SI3456DDV-T1-GE3 Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3456DDV-T1-E3 vs SI3456DDV-T1-GE3
PMN45EN,165 PMN45EN - N-channel TrenchMOS logic level FET@en-us TSOP 6-Pin Nexperia SI3456DDV-T1-E3 vs PMN45EN,165
SI3456DDV-T1-E3 Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3456DDV-T1-E3 vs SI3456DDV-T1-E3
PMN45EN,135 PMN45EN - N-channel TrenchMOS logic level FET@en-us TSOP 6-Pin Nexperia SI3456DDV-T1-E3 vs PMN45EN,135

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