Part Details for SI3456BDV-T1-E3 by Vishay Intertechnologies
Overview of SI3456BDV-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
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Financial Technology (Fintech)
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Automotive
Price & Stock for SI3456BDV-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI3456BDV-T1-E3
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Avnet Americas | Trans MOSFET N-CH 30V 4.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3456BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.2295 / $0.2915 | Buy Now |
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Bristol Electronics | 4198 |
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RFQ | ||
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Quest Components | 4500MA, 30V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | 2828 |
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$0.1820 / $0.7000 | Buy Now |
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Quest Components | 4500MA, 30V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | 3358 |
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$0.2529 / $0.7225 | Buy Now |
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Sense Electronic Company Limited | SOT23-6 | 910 |
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RFQ |
Part Details for SI3456BDV-T1-E3
SI3456BDV-T1-E3 CAD Models
SI3456BDV-T1-E3 Part Data Attributes:
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SI3456BDV-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3456BDV-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MO-193C, TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3456BDV-T1-E3
This table gives cross-reference parts and alternative options found for SI3456BDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3456BDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PMV42ENER | PMV42ENE - 30 V, N-channel Trench MOSFET@en-us TO-236 3-Pin | Nexperia | SI3456BDV-T1-E3 vs PMV42ENER |