Part Details for SI3445DV by Fairchild Semiconductor Corporation
Overview of SI3445DV by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI3445DV
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 67 |
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RFQ | ||
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Quest Components | 1937 |
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$0.1856 / $0.9280 | Buy Now | |
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Rochester Electronics | Small Signal Field-Effect Transistor, 5.5A, 20V, P-Channel MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3529 |
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$0.1160 / $0.1365 | Buy Now |
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ComSIT USA | P-CHANNEL 1.8-V (G-S) MOSFET Power Field-Effect Transistor, 5.6A I(D), 8V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2695 |
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RFQ |
Part Details for SI3445DV
SI3445DV CAD Models
SI3445DV Part Data Attributes:
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SI3445DV
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
SI3445DV
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SUPERSOT-6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI3445DV
This table gives cross-reference parts and alternative options found for SI3445DV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3445DV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDC604P | P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL | onsemi | SI3445DV vs FDC604P |
FDC602P_NL | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3445DV vs FDC602P_NL |
FDC602P | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 | Rochester Electronics LLC | SI3445DV vs FDC602P |
SI3445DV | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3445DV vs SI3445DV |
SI3445DV_NL | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3445DV vs SI3445DV_NL |
SI3469DV-T1-GE3 | Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 | Vishay Intertechnologies | SI3445DV vs SI3469DV-T1-GE3 |
FDC604PD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3445DV vs FDC604PD87Z |
SI3445DVD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3445DV vs SI3445DVD87Z |
FDC602P | P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL | onsemi | SI3445DV vs FDC602P |
FDC602P | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3445DV vs FDC602P |