Datasheets
SI3438DV-T1-E3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 7.4A I(D), 40V, 0.0355ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6

Part Details for SI3438DV-T1-E3 by Vishay Intertechnologies

Results Overview of SI3438DV-T1-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy Automotive

SI3438DV-T1-E3 Information

SI3438DV-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI3438DV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI3438DV-T1-E3
Avnet Americas N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI3438DV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4479
  • 6,000 $0.4456
  • 12,000 $0.3880
  • 18,000 $0.3860
  • 24,000 $0.3840
$0.3840 / $0.4479 Buy Now
DISTI # 781-SI3438DV-E3
Mouser Electronics MOSFETs 40V Vds 20V Vgs TSOP-6 RoHS: Compliant 2801
  • 1 $1.0700
  • 10 $0.8720
  • 100 $0.6150
  • 500 $0.4960
  • 1,000 $0.4570
  • 3,000 $0.4000
$0.4000 / $1.0700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks 0
  • 3,000 $0.4310
  • 6,000 $0.4220
$0.4220 / $0.4310 Buy Now
DISTI # SI3438DV-T1-E3
TTI MOSFETs 40V Vds 20V Vgs TSOP-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.4140
  • 6,000 $0.4060
  • 9,000 $0.3980
  • 24,000 $0.3900
$0.3900 / $0.4140 Buy Now
DISTI # SI3438DV-T1-E3
EBV Elektronik N-CHANNEL 40-V (D-S) MOSFET (Alt: SI3438DV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI3438DV-T1-E3

SI3438DV-T1-E3 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

SI3438DV-T1-E3 Part Data Attributes

SI3438DV-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI3438DV-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 7.4A I(D), 40V, 0.0355ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 7.4 A
Drain-source On Resistance-Max 0.0355 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.5 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI3438DV-T1-E3 Related Parts

SI3438DV-T1-E3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI3438DV-T1-E3 should include a solid ground plane, short and wide traces for the high-frequency signals, and a decoupling capacitor (e.g., 100nF) close to the device. Additionally, keep the input and output traces separate to minimize crosstalk.

  • To ensure proper biasing, make sure to provide a stable voltage supply (VCC) within the recommended range (2.5V to 5.5V) and a suitable bias resistor (e.g., 1kΩ to 10kΩ) between the VCC and the bias pin (pin 5). This will help maintain a stable output voltage and minimize noise.

  • The SI3438DV-T1-E3 is rated for operation from -40°C to +125°C, making it suitable for a wide range of industrial and automotive applications.

  • To protect the SI3438DV-T1-E3 from ESD and other transient events, use a TVS diode (e.g., 1.5KE6.8A) between the input pins and the power supply lines. Additionally, consider adding a series resistor (e.g., 100Ω) and a capacitor (e.g., 100nF) to the input lines to filter out high-frequency noise.

  • The recommended soldering profile for the SI3438DV-T1-E3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds. Make sure to follow the soldering guidelines provided by Vishay Intertechnologies to ensure reliable assembly and minimize the risk of damage.