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Part Details for SI3437DV-T1-E3 by Vishay Siliconix
Overview of SI3437DV-T1-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
Price & Stock for SI3437DV-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI3437DV-T1-E3CT-ND
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DigiKey | MOSFET P-CH 150V 1.4A 6TSOP Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14232 In Stock |
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$0.2938 / $0.8900 | Buy Now |
Part Details for SI3437DV-T1-E3
SI3437DV-T1-E3 CAD Models
SI3437DV-T1-E3 Part Data Attributes
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SI3437DV-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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SI3437DV-T1-E3
Vishay Siliconix
TRANSISTOR 1.1 A, 150 V, 0.79 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 1.25 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 1.1 A | |
| Drain-source On Resistance-Max | 0.79 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.2 W | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |