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Part Details for SI2367DS-T1-GE3 by Vishay Siliconix
Overview of SI2367DS-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI2367DS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI2367DS-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 20V 3.8A SOT23-3 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4701 In Stock |
|
$0.1125 / $0.4000 | Buy Now |
|
DISTI #
70616157
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RS | SI2367DS-T1-GE3 P-channel MOSFET Transistor, 2.2 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2367DS-T1-GE3 RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
|
$0.3480 / $0.4090 | RFQ |
Part Details for SI2367DS-T1-GE3
SI2367DS-T1-GE3 CAD Models
SI2367DS-T1-GE3 Part Data Attributes
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SI2367DS-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2367DS-T1-GE3
Vishay Siliconix
P-CH MOSFET SOT-23 20V 66MOHM @ 4.5V - Tape and Reel
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 89 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.7 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |