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Part Details for SI2365EDS-T1-GE3 by Vishay Intertechnologies
Overview of SI2365EDS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2365EDS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
05AC9484
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Newark | Mosfet, P-Ch, -20V, -5.9A, Sot-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-5.9A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.0265Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power Rohs Compliant: Yes |Vishay SI2365EDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 6000 |
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$0.1010 | Buy Now |
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DISTI #
79AH6518
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Newark | P-Channel 20-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2365EDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 3000 |
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Buy Now | |
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DISTI #
70AC6497
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Newark | Mosfet, P-Ch, -20V, -5.9A, Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V, Msl:- Rohs Compliant: Yes |Vishay SI2365EDS-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3000 |
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$0.1560 / $0.4160 | Buy Now |
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DISTI #
67X6850
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Newark | P-Channel 20-V (D-S) Mosfet |Vishay SI2365EDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0610 / $0.1210 | Buy Now |
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DISTI #
SI2365EDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2365EDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 3000 |
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$0.0639 / $0.0811 | Buy Now |
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DISTI #
70AC6497
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Avnet Americas | Trans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6497) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 3000 Partner Stock |
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$0.1670 / $0.3950 | Buy Now |
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DISTI #
78-SI2365EDS-T1-GE3
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Mouser Electronics | MOSFET -20V Vds 8V Vgs SOT-23 RoHS: Compliant | 140153 |
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$0.0590 / $0.3900 | Buy Now |
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Future Electronics | MOSFET P-CH 20V 5.9A TO-236 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
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$0.0599 / $0.0676 | Buy Now |
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Future Electronics | MOSFET P-CH 20V 5.9A TO-236 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.0599 / $0.0676 | Buy Now |
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DISTI #
SI2365EDS-T1-GE3
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TTI | MOSFET -20V Vds 8V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
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$0.0580 / $0.0650 | Buy Now |
Part Details for SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 CAD Models
SI2365EDS-T1-GE3 Part Data Attributes:
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SI2365EDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2365EDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.9 A | |
| Drain-source On Resistance-Max | 0.041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.7 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |