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TRANSISTOR 3100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET General Purpose Small Signal
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2343DS-T1-E3CT-ND
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DigiKey | MOSFET P-CH 30V 3.1A SOT23-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
19233 In Stock |
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$0 / $1.0300 | Buy Now |
DISTI #
70026198
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RS | P-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI2343DS-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.4850 / $0.5700 | RFQ |
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Quest Components | 3100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 | 44 |
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$0.3750 / $0.4500 | Buy Now |
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SI2343DS-T1-E3
Vishay Siliconix
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Datasheet
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SI2343DS-T1-E3
Vishay Siliconix
TRANSISTOR 3100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 0.053 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 105 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.75 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 40 ns |